METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE BY USING PLASMA ETCHING APPARATUS

    公开(公告)号:US20190080948A1

    公开(公告)日:2019-03-14

    申请号:US15924978

    申请日:2018-03-19

    Abstract: The inventive concept provides a method of manufacturing a semiconductor device using a plasma etching apparatus including an alignment chamber and a process chamber. The method includes: loading a wafer in the alignment chamber of the plasma etching apparatus; rotating the wafer loaded in the alignment chamber according to a plurality of heating zones arranged in an electrostatic chuck of the process chamber, thereby rotating a reference point of the wafer; transferring the wafer that was rotated in the alignment chamber onto the electrostatic chuck of the process chamber; and plasma-etching the wafer that was rotated in the alignment chamber on the electrostatic chuck of the process chamber.

    Source device, router and control method
    6.
    发明授权
    Source device, router and control method 有权
    源设备,路由器和控制方法

    公开(公告)号:US09231985B2

    公开(公告)日:2016-01-05

    申请号:US14036903

    申请日:2013-09-25

    CPC classification number: H04L65/1069 H04L65/4084 H04L65/80 H04L67/2842

    Abstract: A method of controlling a router to transmit Content-Centric Network (CCN)-based real-time contents is provided. The method includes receiving identification information regarding real-time contents that a target device is to receive from a source device and transmitting the real-time contents to the target device, and in response to content request information which is generated based on the identification information being received from the target device, transmitting to the target device contents which correspond to the received request information.

    Abstract translation: 提供了一种控制路由器传输基于内容中心网络(CCN)的实时内容的方法。 该方法包括从源设备接收关于目标设备要接收的实时内容的识别信息,并将该实时内容发送到目标设备,并且响应于基于该识别信息生成的内容请求信息 从所述目标设备接收到的,向所述目标设备发送与所接收的请求信息相对应的内容。

    Method of manufacturing semiconductor device by using plasma etching apparatus

    公开(公告)号:US10290527B2

    公开(公告)日:2019-05-14

    申请号:US15924978

    申请日:2018-03-19

    Abstract: The inventive concept provides a method of manufacturing a semiconductor device using a plasma etching apparatus including an alignment chamber and a process chamber. The method includes: loading a wafer in the alignment chamber of the plasma etching apparatus; rotating the wafer loaded in the alignment chamber according to a plurality of heating zones arranged in an electrostatic chuck of the process chamber, thereby rotating a reference point of the wafer; transferring the wafer that was rotated in the alignment chamber onto the electrostatic chuck of the process chamber; and plasma-etching the wafer that was rotated in the alignment chamber on the electrostatic chuck of the process chamber.

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