公开(公告)号：US10728482B2

公开(公告)日：2020-07-28

申请号：US15850356

申请日：2017-12-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung-bin Yun ,  Kyung-ho Lee

IPC: H04N5/376 ,  H04N9/04 ,  H04N9/07 ,  H01L27/146 ,  H04N5/3745 ,  H04N5/374

Abstract: An image sensor may optimize control of each pixel and/or each photodiode therein according to various pixel structures therein. An electronic apparatus may include the image sensor. The image sensor may include a plurality of pixels, each including a photodiode and a transfer transistor configured to transfer charges accumulated in the photodiode to a floating diffusion floating diffusion region, and transfer transistor lines respectively connected to gate electrodes of the transfer transistors of the pixels. The transfer transistor lines may receive voltages having different magnitudes.

公开(公告)号：US20180191980A1

公开(公告)日：2018-07-05

申请号：US15850356

申请日：2017-12-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung-bin Yun ,  Kyung-ho Lee

IPC: H04N5/378 ,  H04N9/04 ,  H04N9/07 ,  H01L27/146

Abstract: An image sensor may optimize control of each pixel and/or each photodiode therein according to various pixel structures therein. An electronic apparatus may include the image sensor. The image sensor may include a plurality of pixels, each including a photodiode and a transfer transistor configured to transfer charges accumulated in the photodiode to a floating diffusion floating diffusion region, and transfer transistor lines respectively connected to gate electrodes of the transfer transistors of the pixels. The transfer transistor lines may receive voltages having different magnitudes.

公开(公告)号：US20130344639A1

公开(公告)日：2013-12-26

申请号：US13950954

申请日：2013-07-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Eun-sub Shim ,  Jung-chak Ahn ,  Bum-suk Kim ,  Kyung-ho Lee

IPC: H01L27/146

CPC classification number: H01L27/14683 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/1464 ,  H01L27/14687

Abstract: A backside-illuminated active pixel sensor array in which crosstalk between adjacent pixels is prevented, a method of manufacturing the backside-illuminated active pixel sensor array, and a backside-illuminated image sensor including the backside-illuminated active pixel sensor array are provided. The backside-illuminated active pixel sensor array includes a semiconductor substrate of a first conductive type that comprises a front surface and a rear surface, light-receiving devices for generating charges in response to light incident via the rear surface, and one or more pixel isolating layers for forming boundaries between pixels by being disposed between the adjacent light-receiving devices, a wiring layer disposed on the front surface of the semiconductor substrate, and a light filter layer disposed on the rear surface of the semiconductor substrate, wherein a thickness of the one or more pixel isolating layers decreases from a point in the semiconductor substrate toward the rear surface.

Abstract translation: 提供一种其中防止相邻像素之间的串扰的背面照明的有源像素传感器阵列，制造背面照射的有源像素传感器阵列的方法以及包括背面照射的有源像素传感器阵列的背面照明的图像传感器。 背面照明有源像素传感器阵列包括第一导电类型的半导体衬底，其包括前表面和后表面，用于响应于经由后表面入射的光而产生电荷的光接收装置，以及一个或多个像素隔离 通过配置在相邻的光接收装置之间形成像素之间的边界的层，设置在半导体衬底的前表面上的布线层和设置在半导体衬底的后表面上的滤光层， 一个或多个像素隔离层从半导体衬底中的一个点向后表面减小。

公开(公告)号：US11134210B2

公开(公告)日：2021-09-28

申请号：US16898870

申请日：2020-06-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung-bin Yun ,  Kyung-ho Lee

IPC: H04N5/376 ,  H04N9/07 ,  H01L27/146 ,  H04N5/374 ,  H04N5/3745 ,  H04N9/04

Abstract: An image sensor may optimize control of each pixel and/or each photodiode therein according to various pixel structures therein. An electronic apparatus may include the image sensor. The image sensor may include a plurality of pixels, each including a photodiode and a transfer transistor configured to transfer charges accumulated in the photodiode to a floating diffusion floating diffusion region, and transfer transistor lines respectively connected to gate electrodes of the transfer transistors of the pixels. The transfer transistor lines may receive voltages having different magnitudes.

公开(公告)号：US08945973B2

公开(公告)日：2015-02-03

申请号：US13950954

申请日：2013-07-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Eun-sub Shim ,  Jung-chak Ahn ,  Bum-suk Kim ,  Kyung-ho Lee

IPC: H01L21/00 ,  H01L27/146

CPC classification number: H01L27/14683 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/1464 ,  H01L27/14687

Abstract: A backside-illuminated active pixel sensor array in which crosstalk between adjacent pixels is prevented, a method of manufacturing the backside-illuminated active pixel sensor array, and a backside-illuminated image sensor including the backside-illuminated active pixel sensor array are provided. The backside-illuminated active pixel sensor array includes a semiconductor substrate of a first conductive type that comprises a front surface and a rear surface, light-receiving devices for generating charges in response to light incident via the rear surface, and one or more pixel isolating layers for forming boundaries between pixels by being disposed between the adjacent light-receiving devices, a wiring layer disposed on the front surface of the semiconductor substrate, and a light filter layer disposed on the rear surface of the semiconductor substrate, wherein a thickness of the one or more pixel isolating layers decreases from a point in the semiconductor substrate toward the rear surface.

Abstract translation: 提供一种其中防止相邻像素之间的串扰的背面照明的有源像素传感器阵列，制造背面照射的有源像素传感器阵列的方法以及包括背面照射的有源像素传感器阵列的背面照明的图像传感器。 背面照明有源像素传感器阵列包括第一导电类型的半导体衬底，其包括前表面和后表面，用于响应于经由后表面入射的光而产生电荷的光接收装置，以及一个或多个像素隔离 通过配置在相邻的光接收装置之间形成像素之间的边界的层，设置在半导体衬底的前表面上的布线层和设置在半导体衬底的后表面上的滤光层， 一个或多个像素隔离层从半导体衬底中的一个点向后表面减小。