公开(公告)号：US20160225635A1

公开(公告)日：2016-08-04

申请号：US14956609

申请日：2015-12-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Gi-bong LEE ,  Wook-hyun KWON ,  Kyung-soo KIM ,  Seon-ah NAM ,  Yeon-ho PARK ,  Nak-jin SON

IPC: H01L21/308 ,  H01L29/66

CPC classification number: H01L21/3086 ,  H01L21/823431 ,  H01L21/845 ,  H01L29/66795

Abstract: A method of manufacturing a semiconductor device includes forming a plurality of active fins over a semiconductor substrate, sequentially forming first and second hard mask layers over the active fins, forming a first hard mask pattern by etching the second hard mask layer, trimming the first hard mask pattern to form a trimmed hard mask pattern, forming a first photo resist pattern over the first hard mask layer, forming second hard mask patterns by etching the first hard mask layer by using the trimmed hard mask pattern and the first photo resist pattern as an etching mask, and forming active fin patterns by etching the active fins by using the second hard mask patterns as an etching mask.

Abstract translation: 一种制造半导体器件的方法包括在半导体衬底上形成多个活性鳍片，在活性鳍片上依次形成第一和第二硬掩模层，通过蚀刻第二硬掩模层形成第一硬掩模图案，修剪第一硬质掩模层 掩模图案以形成修剪的硬掩模图案，在第一硬掩模层上形成第一光刻胶图案，通过使用修剪的硬掩模图案和第一光致抗蚀剂图案作为第一硬掩模图案来蚀刻第一硬掩模层而形成第二硬掩模图案 蚀刻掩模，并且通过使用第二硬掩模图案作为蚀刻掩模蚀刻活性散热片来形成活性鳍图案。