公开(公告)号：US20220392941A1

公开(公告)日：2022-12-08

申请号：US17721914

申请日：2022-04-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Doowon Kwon ,  Changrok Moon ,  Kyungtae Lim

IPC: H01L27/146 ,  H04N5/369 ,  H04N5/353 ,  H01L23/00

Abstract: Provided is an image sensor including a first layer including a first semiconductor substrate including a pixel unit in which a plurality of unit pixels are provided, and a first wiring layer provided on the first semiconductor substrate, a second layer including a second semiconductor substrate on which a plurality of transistors configured to operate a global shutter operation are provided, and a second wiring layer provided on the second semiconductor substrate, and provided on the first layer such that the first wiring layer and the second wiring layer oppose each other in a first direction, a plurality of first bonding structures bonding the first layer to the second layer based on a first bonding metal exposed on a surface of the first wiring layer being in contact with a second bonding metal exposed on a surface of the second wiring layer, a third layer including a third semiconductor substrate on which a logic circuit is provided, and a third wiring layer provided on the third semiconductor substrate, and bonded to the second layer such that the second semiconductor substrate and the third wiring layer oppose each other in the first direction, and a plurality of second bonding structures extending from the second wiring layer, and bonding the second layer to the third layer based on a bonding via penetrating the second semiconductor substrate being in contact with a third bonding metal exposed to a surface of the third wiring layer.

公开(公告)号：US20240014243A1

公开(公告)日：2024-01-11

申请号：US18295966

申请日：2023-04-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Minho Jang ,  Doowon Kwon ,  Kyungtae Lim ,  Donghyun Kim

IPC: H01L27/146

CPC classification number: H01L27/14634 ,  H01L27/14645 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/1469

Abstract: An image sensor includes a first substrate having a first transistor integrated therein, and a first plurality of wiring structures on the first substrate. The first plurality of wiring structures include a first wiring structure electrically connected to the first transistor. A second substrate extends on the first plurality of wiring structures, and has a second transistor integrated therein, which is electrically connected to a second wiring structure within the first plurality of wiring structures. A second plurality of wiring structures extend on the second substrate. A third substrate is provided on the second plurality of wiring structures. A microlens extends on a light receiving surface of the third substrate. A light sensing element extends within the third substrate. A transfer gate (TG) extends into a portion of the third substrate, extends adjacent the light sensing element, and is electrically connected to a first wiring structure within the second plurality of wiring structures. A floating diffusion (FD) region extends within the third substrate and adjacent the TG. The FD region is electrically connected to a second wiring structure within the second plurality of wiring structures.