公开(公告)号：US11056523B2

公开(公告)日：2021-07-06

申请号：US16831928

申请日：2020-03-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jonghoon Park ,  Bumsuk Kim ,  Jung-Saeng Kim ,  Min Jang ,  Taesub Jung ,  Hyukjin Jung ,  Dongmin Keum ,  Changrok Moon

IPC: H01L27/32 ,  H01L27/146 ,  G06K9/00 ,  G06F21/32 ,  H04N5/374

Abstract: Optical sensors including a light-impeding pattern are provided. The optical sensors may include a plurality of photoelectric conversion regions, a plurality of lenses on the plurality of photoelectric conversion regions, and a light-impeding layer extending between the plurality of photoelectric conversion regions and the plurality of lenses. The light-impeding layer may include an opening between a first one of the plurality of photoelectric conversion regions and a first one of the plurality of lenses. The optical sensors may be configured to be assembled with a display panel such that the plurality of lenses are disposed between the light-impeding layer and the display panel.

公开(公告)号：US20140246707A1

公开(公告)日：2014-09-04

申请号：US14191670

申请日：2014-02-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Junemo Koo ,  Namgil Kim ,  Changrok Moon ,  Byungjun Park ,  Jongcheol Shin

IPC: H01L27/148

CPC classification number: H01L27/14689 ,  H01L27/14614 ,  H01L27/14623 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/1464

Abstract: An image sensor includes a substrate having adjacent pixel regions and respective photodiode regions therein, and a pixel separation portion including a trench extending into the substrate between the adjacent pixel regions. The trench includes a conductive common bias line therein and an insulating device isolation layer between the common bias line and surfaces of the trench. A conductive interconnection is coupled to the common bias line and is configured to provide a negative voltage thereto. Related fabrication methods are also discussed.

Abstract translation: 图像传感器包括其中具有相邻像素区域和各个光电二极管区域的衬底，以及包括在相邻像素区域之间延伸到衬底中的沟槽的像素分离部分。 沟槽中包括一个导电公共偏置线，以及在公共偏置线和沟槽表面之间的绝缘器件隔离层。 导电互连耦合到公共偏置线，并且被配置为向其提供负电压。 还讨论了相关的制造方法。

公开(公告)号：USRE49793E1

公开(公告)日：2024-01-09

申请号：US17566169

申请日：2021-12-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Junemo Koo ,  Namgil Kim ,  Changrok Moon ,  Byungjun Park ,  Jongcheol Shin

IPC: H01L27/146

CPC classification number: H01L27/14689 ,  H01L27/1463 ,  H01L27/1464 ,  H01L27/14614 ,  H01L27/14623 ,  H01L27/14636

Abstract: An image sensor includes a substrate having adjacent pixel regions and respective photodiode regions therein, and a pixel separation portion including a trench extending into the substrate between the adjacent pixel regions. The trench includes a conductive common bias line therein and an insulating device isolation layer between the common bias line and surfaces of the trench. A conductive interconnection is coupled to the common bias line and is configured to provide a negative voltage thereto. Related fabrication methods are also discussed.

公开(公告)号：US09577000B2

公开(公告)日：2017-02-21

申请号：US14956680

申请日：2015-12-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dukseo Park ,  Sangil Jung ,  Changrok Moon

IPC: H01L27/14 ,  H01L27/146

CPC classification number: H01L27/14643 ,  H01L27/14603 ,  H01L27/14607 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/14614 ,  H01L27/1463 ,  H01L27/14689

Abstract: An image sensor can include a photoelectric conversion part of an active region of a substrate and a trench in the substrate. A transfer transistor gate electrode can extend from outside the trench into the trench and terminate in the trench to provide an exposed portion of the trench in the photoelectric conversion part.

Abstract translation: 图像传感器可以包括衬底的有源区的光电转换部分和衬底中的沟槽。 传输晶体管栅电极可以从沟槽的外部延伸到沟槽中并且终止于沟槽中以在光电转换部分中提供沟槽的暴露部分。

公开(公告)号：US10892289B2

公开(公告)日：2021-01-12

申请号：US16784308

申请日：2020-02-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jonghoon Park ,  BumSuk Kim ,  Jung-Saeng Kim ,  Min Jang ,  Taesub Jung ,  Hyukjin Jung ,  Dongmin Keum ,  Changrok Moon

IPC: H01L27/32 ,  H01L27/146 ,  G06K9/00 ,  G06F21/32 ,  H04N5/374

Abstract: Optical sensors including a light-impeding pattern are provided. The optical sensors may include a plurality of photoelectric conversion regions, a plurality of lenses on the plurality of photoelectric conversion regions, and a light-impeding layer extending between the plurality of photoelectric conversion regions and the plurality of lenses. The light-impeding layer may include an opening between a first one of the plurality of photoelectric conversion regions and a first one of the plurality of lenses. The optical sensors may be configured to be assembled with a display panel such that the plurality of lenses are disposed between the light-impeding layer and the display panel.

公开(公告)号：US09721989B2

公开(公告)日：2017-08-01

申请号：US15349227

申请日：2016-11-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Junemo Koo ,  Namgil Kim ,  Changrok Moon ,  Byungjun Park ,  Jongcheol Shin

IPC: H01L27/146

Abstract: An image sensor includes a substrate having adjacent pixel regions and respective photodiode regions therein, and a pixel separation portion including a trench extending into the substrate between the adjacent pixel regions. The trench includes a conductive common bias line therein and an insulating device isolation layer between the common bias line and surfaces of the trench. A conductive interconnection is coupled to the common bias line and is configured to provide a negative voltage thereto. Related fabrication methods are also discussed.

公开(公告)号：US10672816B2

公开(公告)日：2020-06-02

申请号：US16519482

申请日：2019-07-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jonghoon Park ,  BumSuk Kim ,  Jung-Saeng Kim ,  Min Jang ,  Taesub Jung ,  Hyukjin Jung ,  Dongmin Keum ,  Changrok Moon

IPC: H01L27/32 ,  H01L27/146 ,  G06K9/00 ,  G06F21/32 ,  H04N5/374

Abstract: Optical sensors including a light-impeding pattern are provided. The optical sensors may include a plurality of photoelectric conversion regions, a plurality of lenses on the plurality of photoelectric conversion regions, and a light-impeding layer extending between the plurality of photoelectric conversion regions and the plurality of lenses. The light-impeding layer may include an opening between a first one of the plurality of photoelectric conversion regions and a first one of the plurality of lenses. The optical sensors may be configured to be assembled with a display panel such that the plurality of lenses are disposed between the light-impeding layer and the display panel.

公开(公告)号：US09780142B1

公开(公告)日：2017-10-03

申请号：US15630498

申请日：2017-06-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Junemo Koo ,  Namgil Kim ,  Changrok Moon ,  Byungjun Park ,  Jongcheol Shin

IPC: H01L27/146

CPC classification number: H01L27/14689 ,  H01L27/14614 ,  H01L27/14623 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/1464

Abstract: An image sensor includes a substrate having adjacent pixel regions and respective photodiode regions therein, and a pixel separation portion including a trench extending into the substrate between the adjacent pixel regions. The trench includes a conductive common bias line therein and an insulating device isolation layer between the common bias line and surfaces of the trench. A conductive interconnection is coupled to the common bias line and is configured to provide a negative voltage thereto. Related fabrication methods are also discussed.

公开(公告)号：US09754994B2

公开(公告)日：2017-09-05

申请号：US15349227

申请日：2016-11-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Junemo Koo ,  Namgil Kim ,  Changrok Moon ,  Byungjun Park ,  Jongcheol Shin

IPC: H01L27/146

CPC classification number: H01L27/14689 ,  H01L27/14614 ,  H01L27/14623 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/1464

Abstract: An image sensor includes a substrate having adjacent pixel regions and respective photodiode regions therein, and a pixel separation portion including a trench extending into the substrate between the adjacent pixel regions. The trench includes a conductive common bias line therein and an insulating device isolation layer between the common bias line and surfaces of the trench. A conductive interconnection is coupled to the common bias line and is configured to provide a negative voltage thereto. Related fabrication methods are also discussed.

公开(公告)号：US20170062513A1

公开(公告)日：2017-03-02

申请号：US15349227

申请日：2016-11-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Junemo Koo ,  Namgil Kim ,  Changrok Moon ,  Byungjun Park ,  Jongcheol Shin

IPC: H01L27/146

CPC classification number: H01L27/14689 ,  H01L27/14614 ,  H01L27/14623 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/1464

Abstract: An image sensor includes a substrate having adjacent pixel regions and respective photodiode regions therein, and a pixel separation portion including a trench extending into the substrate between the adjacent pixel regions. The trench includes a conductive common bias line therein and an insulating device isolation layer between the common bias line and surfaces of the trench. A conductive interconnection is coupled to the common bias line and is configured to provide a negative voltage thereto. Related fabrication methods are also discussed.

Abstract translation: 图像传感器包括其中具有相邻像素区域和各个光电二极管区域的衬底，以及包括在相邻像素区域之间延伸到衬底中的沟槽的像素分离部分。 沟槽中包括一个导电公共偏置线，以及在公共偏置线和沟槽表面之间的绝缘器件隔离层。 导电互连耦合到公共偏置线，并且被配置为向其提供负电压。 还讨论了相关的制造方法。