公开(公告)号：US20230062193A1

公开(公告)日：2023-03-02

申请号：US17983924

申请日：2022-11-09

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  UNIVERSITY OF MASSACHUSETTS

Inventor： Seunghoon HAN ,  Mahdad MANSOUREE ,  Amir ARBABI ,  Suyeon LEE

IPC: G02B3/00 ,  G02B1/00 ,  G02B1/14

Abstract: A meta-lens includes a first layer that is arranged on a substrate and that includes a plurality of first nanostructures and a second layer including a plurality of second nanostructures separately arranged from the first nanostructures. The meta-lens may focus light of a plurality of wavelengths or light of a wide wavelength bandwidth due to the arrangement of the nanostructures in a multilayer structure.

公开(公告)号：US20220359772A1

公开(公告)日：2022-11-10

申请号：US17703961

申请日：2022-03-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Radwanul Hasan SIDDIQUE ,  Yibing Michelle WANG ,  Mahdad MANSOUREE

IPC: H01L31/0236 ,  H04N5/33 ,  H01L27/146

Abstract: A pixel for an imaging sensor is disclosed that includes a photodetector and a metasurface. The photodetector includes a first surface and sidewalls that extend into the photodetector in a first direction from the first surface. The metasurface is formed on the first surface and includes nanostructures that bend a predetermined range of wavelengths of light at least 70 degrees in opposing angles from a direction that is substantially perpendicular to the first surface, and a standing wave pattern forms in an active region of the pixel. The predetermined range of wavelengths of light includes 700 nm to 1100 nm inclusive. In one embodiment, the pixel is a silicon-based photodetector, a thickness of the pixel in the first direction is less than or equal to 5 μm, and the pixel absorbs at least 20% of a power of the predetermined range of wavelengths of light.

公开(公告)号：US20210405270A1

公开(公告)日：2021-12-30

申请号：US17229425

申请日：2021-04-13

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  UNIVERSITY OF MASSACHUSETTS

Inventor： Seunghoon HAN ,  Mahdad MANSOUREE ,  Amir ARBABI ,  Sangeun MUN

IPC: G02B5/18 ,  G02B1/00 ,  G02B5/30

Abstract: Provided is a meta optical device including a plurality of phase modulation regions respectively including a plurality of nanostructures that have shapes and arrangement based on a preset rule, the plurality of phase modulation regions being configured to modulate a phase of incident light of a preset wavelength band, wherein at least two phase modulation regions of the plurality of phase modulation regions have phase modulation ranges in a first direction that are same, and wherein the plurality of nanostructures included in the at least two phase modulation regions have width ranges in the first direction that are different from each other.

公开(公告)号：US20200264343A1

公开(公告)日：2020-08-20

申请号：US16574943

申请日：2019-09-18

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  UNIVERSITY OF MASSACHUSETTS

Inventor： Seunghoon HAN ,  Mahdad MANSOUREE ,  Amir ARBABI ,  Suyeon LEE

IPC: G02B3/00 ,  G02B1/00 ,  G02B1/14

Abstract: A meta-lens includes a first layer that is arranged on a substrate and that includes a plurality of first nanostructures and a second layer including a plurality of second nanostructures separately arranged from the first nanostructures. The meta-lens may focus light of a plurality of wavelengths or light of a wide wavelength bandwidth due to the arrangement of the nanostructures in a multilayer structure.

公开(公告)号：US20200083669A1

公开(公告)日：2020-03-12

申请号：US16360649

申请日：2019-03-21

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  UNIVERSITY OF MASSACHUSETTS

Inventor： Byunghoon NA ,  Mahdad MANSOUREE ,  Seunghoon HAN ,  Amir ARBABI

IPC: H01S5/183 ,  H01S5/343 ,  H01S5/347 ,  H01S5/42 ,  H01S5/042 ,  G01B11/24 ,  G01B11/14 ,  G01P13/00

Abstract: Provided are an addressable laser array device and an electronic apparatus including the addressable laser array device. The addressable laser array device includes a plurality of VCSELs, each including a distributed Bragg reflector (DBR), a nanostructure reflector including a plurality of nanostructures having a sub-wavelength dimension, and a gain layer disposed between the DBR and the nanostructure reflector; a plurality of first wiring patterns extending in a first direction and being electrically connected to the plurality of VCSELs, respectively; and a plurality of second wiring patterns extending in a second direction intersecting the first direction and being electrically connected to the plurality of VCSELs, respectively, wherein the plurality of VCSELs are disposed at intersections of the plurality of first wiring patterns and the plurality of second wiring patterns, and the addressable VCSEL array device is configured to selectively drive at least some of the plurality of VCSELs.