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公开(公告)号:US11829231B2
公开(公告)日:2023-11-28
申请号:US17539403
申请日:2021-12-01
Applicant: Samsung Electronics Co., Ltd.
Inventor: Hartej Singh , Mallikarjun Shivappa Bidari , Raju Udava Siddappa , Surajit Pradeep Karmakar , Thejeswara Reddy Pocha , Tushar Vrind , Venkata Raju Indukuri
CPC classification number: G06F11/0778 , G06F11/0772 , G06F11/1004 , G06F21/602 , G06F21/79 , G06F2221/0751
Abstract: A method of generating a core dump in a User Equipment (UE) may include detecting, using at least one processor, a trigger, the trigger including an instruction to generate a core dump of the UE. The method may further include classifying, using the at least one processor, data stored in memory of the UE as Read-Write (RW) data or Read Only (RO) data. The method may further include generating, using the at least one processor, a partial core dump based on the RW data of the memory.
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公开(公告)号:US11755473B2
公开(公告)日:2023-09-12
申请号:US17848716
申请日:2022-06-24
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Surendra Singh , Dinesh Gehlot , Mallikarjun Shivappa Bidari , Raju Udava Siddappa , Shashank Vimal , Shreya Ganatra , Sujay Shankar Gaitonde , Tushar Vrind , Venkata Raju Indukuri
CPC classification number: G06F12/0253 , G06F9/3004 , G06F9/321 , G06F12/0238
Abstract: A method for managing memory leaks in a memory device includes grouping, by a garbage collection system, a plurality of similar memory allocations of the memory device into one or more Unique Fixed Identifiers (UFIs); identifying, by the garbage collection system, one of the one or more UFIs having a highest accumulated memory size and adding each of the plurality of memory allocations in the identified one of the one or more UFIs into a Potential Leak Candidate List (PLCL); identifying, by the garbage collection system, the memory leaks in the memory device by identifying unreferenced memory addresses associated with the plurality of memory allocations in the PLCL; and releasing, by the garbage collection system, the identified unreferenced memory addresses associated with the plurality of memory allocations corresponding to the memory leaks into the memory device.
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