公开(公告)号：US09159440B2

公开(公告)日：2015-10-13

申请号：US14076704

申请日：2013-11-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Min Gun Park ,  Ki Tae Park

IPC: G11C11/34 ,  G11C16/26 ,  G11C11/56 ,  G11C16/04

CPC classification number: G11C16/26 ,  G11C11/5642 ,  G11C16/0483

Abstract: Provided is a method for reading data from a nonvolatile memory device. In the method, a read method includes a first read step including reading a first memory cell of the nonvolatile memory device by applying a first set of read voltages to the first memory cell. The read method further includes a second read step including reading the first memory cell by applying a second set of read voltages and none of the voltages in the first set to the first memory cell when it is determined that the first read step results in an error and cannot be corrected with error correction. The second read step is performed by using data resulting from the first read step.

Abstract translation: 提供了一种从非易失性存储装置读取数据的方法。 在该方法中，读取方法包括第一读取步骤，包括通过向第一存储单元施加第一组读取电压来读取非易失性存储器件的第一存储器单元。 读取方法还包括第二读取步骤，包括当确定第一读取步骤导致错误时，通过将第一组读取电压和第一组中的电压没有到第一存储器单元来读取第一存储器单元 并且不能用纠错校正。 通过使用从第一读取步骤得到的数据来执行第二读取步骤。