公开(公告)号：US11031410B2

公开(公告)日：2021-06-08

申请号：US16425365

申请日：2019-05-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Se Jun Park ,  Min-Tai Yu ,  Jae Duk Lee

IPC: H01L27/11556 ,  H01L27/11582 ,  G11C5/06

Abstract: A nonvolatile memory device in which reliability is improved and a method for fabricating the same are provided. The nonvolatile memory device includes a mold structure which includes a first insulating pattern, a first gate electrode and a second insulating pattern sequentially stacked on a substrate, a semiconductor pattern which penetrates the mold structure, is connected to the substrate, and extends in a first direction, a first charge storage film extending in the first direction between the first insulating pattern and the second insulating pattern and between the first gate electrode and the semiconductor pattern, and a blocking insulation film between the first gate electrode and the first charge storage film, wherein a first length at which the first charge storage film extends in the first direction is longer than a second length at which the blocking insulation film extends in the first direction.