公开(公告)号：US20240421206A1

公开(公告)日：2024-12-19

申请号：US18663186

申请日：2024-05-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seonkyu Shin ,  Yongjin Kim ,  Sanghoon Ahn ,  Minkyoung Lee

IPC: H01L29/423 ,  H01L29/06 ,  H01L29/417 ,  H01L29/66 ,  H01L29/775 ,  H01L29/786

Abstract: A semiconductor device includes an active pattern extending on a substrate in a first direction; first and second lower channel layers in a first region and a second region of the active pattern, respectively; first and second upper channel layers on the first and second lower channel layers, respectively; a first source/drain pattern connected to the first and second lower channel layers; an isolation insulating layer on surfaces of the first source/drain pattern in the second direction, where a thickness of opposing edge portions of the isolation insulating layer when viewed in cross section along the first direction is smaller than a thickness of a central portion therebetween; a second source/drain pattern connected to the first and second upper channel layers; and an interlayer insulating layer on the second source/drain patterns and on the isolation insulating layer.