-
公开(公告)号:US11196781B2
公开(公告)日:2021-12-07
申请号:US16041016
申请日:2018-07-20
Applicant: Samsung Electronics Co., Ltd.
Inventor: Yongjin Kim , Kyungah Chang
IPC: H04L29/06 , H04L29/08 , G06F9/48 , G06F3/0354 , G06F3/0488
Abstract: A method and an apparatus for executing an application are provided. The application execution method of the present disclosure includes connecting a first external device, receiving, from the first external device, connection information for use in connecting to a second external device, connecting to the second external device using the connection information, and transmitting, when a transfer command is received, application execution state information to the second external device. The application execution method of the present disclosure is capable of allowing the user to execute the application conveniently.
-
公开(公告)号:US20140210017A1
公开(公告)日:2014-07-31
申请号:US14243358
申请日:2014-04-02
Applicant: Samsung Electronics Co., Ltd.
Inventor: Myeongcheol Kim , Sooyeon Jeong , Joon Goo Hong , Dohyoung Kim , Yongjin Kim , Jin Wook Lee , Yoonhae Kim
IPC: H01L29/49
CPC classification number: H01L29/4966 , H01L21/76804 , H01L21/76831 , H01L21/76895 , H01L21/76897 , H01L29/4958 , H01L29/4975 , H01L29/66545
Abstract: A semiconductor device and a method of forming the semiconductor device includes: forming gate electrodes on a semiconductor substrate and forming spacers on both side surfaces of the gate electrodes; forming capping patterns on the gate electrodes; and forming a metal contact between the gate electrodes. Each of the capping patterns is formed to have a width greater than a width of each of the gate electrodes.
Abstract translation: 半导体器件和形成半导体器件的方法包括:在半导体衬底上形成栅电极并在栅电极的两个侧表面上形成间隔物; 在栅电极上形成封盖图案; 以及在栅电极之间形成金属接触。 每个封盖图案形成为具有大于每个栅电极的宽度的宽度。
-
公开(公告)号:US20240421206A1
公开(公告)日:2024-12-19
申请号:US18663186
申请日:2024-05-14
Applicant: Samsung Electronics Co., Ltd.
Inventor: Seonkyu Shin , Yongjin Kim , Sanghoon Ahn , Minkyoung Lee
IPC: H01L29/423 , H01L29/06 , H01L29/417 , H01L29/66 , H01L29/775 , H01L29/786
Abstract: A semiconductor device includes an active pattern extending on a substrate in a first direction; first and second lower channel layers in a first region and a second region of the active pattern, respectively; first and second upper channel layers on the first and second lower channel layers, respectively; a first source/drain pattern connected to the first and second lower channel layers; an isolation insulating layer on surfaces of the first source/drain pattern in the second direction, where a thickness of opposing edge portions of the isolation insulating layer when viewed in cross section along the first direction is smaller than a thickness of a central portion therebetween; a second source/drain pattern connected to the first and second upper channel layers; and an interlayer insulating layer on the second source/drain patterns and on the isolation insulating layer.
-
公开(公告)号:USD842917S1
公开(公告)日:2019-03-12
申请号:US29579406
申请日:2016-09-29
Applicant: Samsung Electronics Co., Ltd.
Designer: Minchul Kim , Yongkuk Kim , Yongjin Kim , Jinhyoung An , Jaeil Jung , Sungrae Cho
-
公开(公告)号:USD819716S1
公开(公告)日:2018-06-05
申请号:US29579412
申请日:2016-09-29
Applicant: Samsung Electronics Co., Ltd.
Designer: Minchul Kim , Yongkuk Kim , Yongjin Kim , Jinhyoung An , Jaeil Jung , Sungrae Cho
-
公开(公告)号:US10033773B2
公开(公告)日:2018-07-24
申请号:US14097673
申请日:2013-12-05
Applicant: Samsung Electronics Co., Ltd.
Inventor: Yongjin Kim , Kyungah Chang
IPC: H04L29/06 , H04L29/08 , G06F9/48 , G06F3/0354 , G06F3/0488
Abstract: A method and an apparatus for executing an application are provided. The application execution method of the present disclosure includes connecting a first external device, receiving, from the first external device, connection information for use in connecting to a second external device, connecting to the second external device using the connection information, and transmitting, when a transfer command is received, application execution state information to the second external device. The application execution method of the present disclosure is capable of allowing the user to execute the application conveniently.
-
-
-
-
-