NON-VOLATILE MEMORY DEVICE
    2.
    发明申请

    公开(公告)号:US20240428857A1

    公开(公告)日:2024-12-26

    申请号:US18819002

    申请日:2024-08-29

    Abstract: A non-volatile memory device is provided. The memory device includes: word lines stacked on a substrate; a string select lines on the word lines, the string select lines being spaced apart from each other in a first horizontal direction and extending in a second horizontal direction; and a memory cell array including memory blocks, each of which includes memory cells connected to the word lines and the string select lines. The string select lines include a first string select line, and a second string select line which is farther from a word line cut region than the first string select line, and a program operation performed on second memory cells connected to a selected word line and the second string select line is performed before a program operation performed on first memory cells connected to the selected word line and the first string select line.

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