公开(公告)号：US20230178434A1

公开(公告)日：2023-06-08

申请号：US17879049

申请日：2022-08-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Minyoung KWON ,  Kwangwuk PARK ,  Youngmin LEE ,  Inyoung LEE ,  Sungdong CHO

IPC: H01L21/768 ,  H01L23/48 ,  H01L23/528

CPC classification number: H01L21/76898 ,  H01L23/481 ,  H01L21/76816 ,  H01L23/5283 ,  H01L21/76897

Abstract: A semiconductor device including a semiconductor substrate, an interlayer insulation layer on the semiconductor substrate, a first via structure passing through the semiconductor substrate and the interlayer insulation layer and having a first diameter, and a second via structure passing through the semiconductor substrate and the interlayer insulation layer, the second via structure having a second diameter greater than the first diameter, at a same vertical level may be provided. A sidewall of the first via structure may include at least one undercut region horizontally protruding toward a center of the first via structure, and an outer sidewall of the second via structure may be in contact with either the semiconductor substrate or the interlayer insulation layer at an area above the undercut region.