SEMICONDUCTOR DEVICE
    1.
    发明申请

    公开(公告)号:US20190131386A1

    公开(公告)日:2019-05-02

    申请号:US16229950

    申请日:2018-12-21

    Abstract: A semiconductor device includes a plurality of electrode structures formed on a substrate; and an upper supporter group and a lower supporter between upper ends and lower ends of the plurality of electrode structures The upper supporter group includes a plurality of supporters, and at least some of the plurality of supporters each have an upper surface and a lower surface. One of the upper surface and the lower surface has a curved profile, and the other surface has a flat profile.

    SEMICONDUCTOR DEVICE
    3.
    发明申请

    公开(公告)号:US20210057518A1

    公开(公告)日:2021-02-25

    申请号:US17094104

    申请日:2020-11-10

    Abstract: A semiconductor device includes a plurality of electrode structures formed on a substrate; and an upper supporter group and a lower supporter between upper ends and lower ends of the plurality of electrode structures The upper supporter group includes a plurality of supporters, and at least some of the plurality of supporters each have an upper surface and a lower surface. One of the upper surface and the lower surface has a curved profile, and the other surface has a flat profile.

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