公开(公告)号：US20200280619A1

公开(公告)日：2020-09-03

申请号：US16649797

申请日：2018-10-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Young-min KO ,  Ki-hyun KIM ,  Seok-min BAE ,  Jung-mo YEON ,  Hyun-woo OCK ,  Sung-bin IM ,  Tae-hoon HA

IPC: H04L29/06 ,  H04L29/08 ,  H04L12/28

Abstract: An electronic device control system is provided. The system includes an electronic device controlled by either a command in a first format or a command in a second format, a terminal device for transmitting a control signal for controlling the electronic device to an external server, and a server configured to, based on receiving the control signal from the external server, identify the type of the electronic device on the basis of the control signal, and based on the electronic device being a type of electronic device operating by a command in the first format, and the control signal including a command in the first format, transmit the control signal to the electronic device, and based on the electronic device being a type of electronic device operating by a command in the second format, and the control signal including a command in the first format, convert the command in the first format included in the control signal into the second format, and transmit the control signal including the converted command to the electronic device.

公开(公告)号：US20210057518A1

公开(公告)日：2021-02-25

申请号：US17094104

申请日：2020-11-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ha-young YI ,  Youn-seok CHOI ,  Young-min KO ,  Mun-jun KIM ,  Hong-gun KIM ,  Seung-Heon LEE

IPC: H01L49/02 ,  H01L27/108

Abstract: A semiconductor device includes a plurality of electrode structures formed on a substrate; and an upper supporter group and a lower supporter between upper ends and lower ends of the plurality of electrode structures The upper supporter group includes a plurality of supporters, and at least some of the plurality of supporters each have an upper surface and a lower surface. One of the upper surface and the lower surface has a curved profile, and the other surface has a flat profile.

公开(公告)号：US20190131386A1

公开(公告)日：2019-05-02

申请号：US16229950

申请日：2018-12-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ha-young YI ,  Youn-seok CHOI ,  Young-min KO ,  Mun-jun KIM ,  Hong-gun KIM ,  Seung-heon LEE

IPC: H01L49/02 ,  H01L27/108

Abstract: A semiconductor device includes a plurality of electrode structures formed on a substrate; and an upper supporter group and a lower supporter between upper ends and lower ends of the plurality of electrode structures The upper supporter group includes a plurality of supporters, and at least some of the plurality of supporters each have an upper surface and a lower surface. One of the upper surface and the lower surface has a curved profile, and the other surface has a flat profile.

公开(公告)号：US20180102125A1

公开(公告)日：2018-04-12

申请号：US15782228

申请日：2017-10-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Young-min KO ,  Jin-geun PARK

IPC: G10L15/01 ,  G10L15/04 ,  G10L15/08

CPC classification number: G10L15/01 ,  G10L15/04 ,  G10L15/08 ,  G10L15/22 ,  G10L21/0208 ,  G10L25/78 ,  G10L2015/088 ,  G10L2021/02082

Abstract: An electronic device is provided, which includes a storage configured to store a voice recognition application including a wakeup word for entering into a voice command recognition mode, a sensor configured to sense a sound signal, and a processor configured to convert the sound signal into a digital signal and to transfer the converted digital signal to the application, wherein the application identifies whether a characteristic value of the digital signal is equal to or higher than a predetermined threshold level if the digital signal is received, performs voice recognition for the digital signal if the characteristic value of the digital signal is equal to or higher than the predetermined threshold level, and activates the voice command recognition mode if a keyword of a voice included in the digital signal coincides with the wakeup word.

公开(公告)号：US20170345886A1

公开(公告)日：2017-11-30

申请号：US15601186

申请日：2017-05-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ha-young YI ,  Youn-seok CHOI ,  Young-min KO ,  Mun-jun KIM ,  Hong-gun KIM ,  Seung-heon LEE

IPC: H01L49/02 ,  H01L27/108

CPC classification number: H01L28/90 ,  H01L27/10808 ,  H01L27/10814 ,  H01L27/10855 ,  H01L28/87 ,  H01L28/91

Abstract: A semiconductor device includes a plurality of electrode structures formed on a substrate; and an upper supporter group and a lower supporter between upper ends and lower ends of the plurality of electrode structures The upper supporter group includes a plurality of supporters, and at least some of the plurality of supporters each have an upper surface and a lower surface. One of the upper surface and the lower surface has a curved profile, and the other surface has a flat profile.

公开(公告)号：US20160379985A1

公开(公告)日：2016-12-29

申请号：US15191552

申请日：2016-06-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Youn-Seok CHOI ,  Young-min KO ,  HONGGUN KIM ,  JONGMYEONG LEE ,  BYOUNGDEOG CHOI

IPC: H01L27/108 ,  H01L49/02 ,  H01L21/311

CPC classification number: H01L28/90 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/31144 ,  H01L27/10852

Abstract: A method for manufacturing a semiconductor device includes forming a storage node hole passing through an upper support layer, a bowing prevention layer and an upper mold layer using a dry etching process, forming a lower electrode in the storage node hole, patterning the upper support layer and the bowing prevention layer to expose a portion of the upper mold layer, removing the upper mold layer and at least a portion of the bowing prevention layer using a first wet etching process, and sequentially forming a dielectric layer and an upper electrode that cover the lower electrode. An etch rate of the bowing prevention layer may be substantially equal to an etch rate of the upper support layer during the dry etching process. An etch rate of the bowing prevention layer may be higher than an etch rate of the upper support layer during the first wet etching process.

Abstract translation: 一种半导体装置的制造方法，其特征在于，包括：通过干式蚀刻工序形成穿过上支撑层，弓形防止层和上模层的存储节点孔，在所述存储节点孔中形成下电极，使所述上支撑层 以及所述弯曲防止层，以暴露所述上模层的一部分，使用第一湿蚀刻工艺去除所述上模层和所述防弓层的至少一部分，并且顺序地形成覆盖所述上模具层的电介质层和上电极 下电极。 弯曲防止层的蚀刻速率可以基本上等于在干蚀刻工艺期间上支撑层的蚀刻速率。 在第一湿法蚀刻工艺期间，防弓层的蚀刻速率可高于上支撑层的蚀刻速率。