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    Oxide film, integrated circuit device, and methods of forming the same
    1.
    发明授权
    Oxide film, integrated circuit device, and methods of forming the same 有权

    公开(公告)号：US09627469B2

    公开(公告)日：2017-04-18

    申请号：US14972903

    申请日：2015-12-17

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Ha-young Yi ,  Jun-won Lee ,  Byoung-deog Choi ,  Jong-myeong Lee ,  Mun-jun Kim ,  Hong-gun Kim

    IPC: H01L29/40 ,  H01L49/02

    CPC classification number: H01L28/91 ,  H01L21/76801 ,  H01L21/76802 ,  H01L21/76828 ,  H01L23/5223 ,  H01L23/53295

    Abstract: A doped mold film is formed with a dopant concentration gradient in the doped mold film that continuously varies in a thickness direction and a portion of the doped mold film is etched in the thickness direction to form a hole so that an electrode can be formed along an inner wall of the hole. The electrode thus formed includes a first outer wall surface, a second outer wall surface, and a third outer wall surface wherein the first outer wall surface is in contact with a sidewall of an insulating pattern formed on a substrate within a through hole formed in the insulating pattern; the second outer wall surface is in contact with a top surface of the insulating pattern and extends in a lateral direction; the third outer wall surface is spaced apart from the first outer wall surface with the second outer wall surface therebetween; and the third outer wall surface extends on the insulating pattern in a direction away from the substrate.

    SEMICONDUCTOR DEVICE
    2.
    发明申请
    SEMICONDUCTOR DEVICE 审中-公开

    公开(公告)号：US20200083319A1

    公开(公告)日：2020-03-12

    申请号：US16679871

    申请日：2019-11-11

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Ha-young YI ,  Youn-seok Choi ,  Young-min Ko ,  Mun-jun Kim ,  Hong-gun Kim ,  Seung-heon Lee

    IPC: H01L49/02 ,  H01L27/108

    Abstract: A semiconductor device includes a plurality of electrode structures formed on a substrate; and an upper supporter group and a lower supporter between upper ends and lower ends of the plurality of electrode structures The upper supporter group includes a plurality of supporters, and at least some of the plurality of supporters each have an upper surface and a lower surface. One of the upper surface and the lower surface has a curved profile, and the other surface has a flat profile.

    OXIDE FILM, INTEGRATED CIRCUIT DEVICE, AND METHODS OF FORMING THE SAME
    5.
    发明申请
    OXIDE FILM, INTEGRATED CIRCUIT DEVICE, AND METHODS OF FORMING THE SAME 有权
    氧化膜，集成电路装置及其形成方法

    公开(公告)号：US20160343799A1

    公开(公告)日：2016-11-24

    申请号：US14972903

    申请日：2015-12-17

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Ha-young Yi ,  Jun-won Lee ,  Byoung-deog Choi ,  Jong-myeong Lee ,  Mun-jun Kim ,  Hong-gun Kim

    IPC: H01L49/02

    CPC classification number: H01L28/91 ,  H01L21/76801 ,  H01L21/76802 ,  H01L21/76828 ,  H01L23/5223 ,  H01L23/53295

    Abstract: A doped mold film is formed with a dopant concentration gradient in the doped mold film that continuously varies in a thickness direction and a portion of the doped mold film is etched in the thickness direction to form a hole so that an electrode can be formed along an inner wall of the hole. The electrode thus formed includes a first outer wall surface, a second outer wall surface, and a third outer wall surface wherein the first outer wall surface is in contact with a sidewall of an insulating pattern formed on a substrate within a through hole formed in the insulating pattern; the second outer wall surface is in contact with a top surface of the insulating pattern and extends in a lateral direction; the third outer wall surface is spaced apart from the first outer wall surface with the second outer wall surface therebetween; and the third outer wall surface extends on the insulating pattern in a direction away from the substrate.

    Abstract translation: 掺杂的模具膜在掺杂的模具膜中形成掺杂剂浓度梯度，其厚度方向连续变化，并且在厚度方向上蚀刻一部分掺杂的模具膜以形成孔，从而沿着 孔的内壁。 如此形成的电极包括第一外壁表面，第二外壁表面和第三外壁表面，其中第一外壁表面与形成在通孔中的通孔中的基板上形成的绝缘图案的侧壁接触 绝缘图案; 所述第二外壁表面与所述绝缘图案的顶表面接触并沿横向方向延伸; 所述第三外壁表面与所述第一外壁表面间隔开，而所述第二外壁表面之间具有第二外壁表面; 并且第三外壁表面在远离基底的方向上在绝缘图案上延伸。

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