公开(公告)号：US11195583B2

公开(公告)日：2021-12-07

申请号：US16736881

申请日：2020-01-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jihong Kim ,  Kyungduk Lee ,  Young-Seop Shim ,  Kirock Kwon ,  Myoung Seok Kim

IPC: G11C16/04 ,  G11C16/08 ,  G11C16/10 ,  G11C16/34 ,  G11C16/26 ,  G06F3/06 ,  G06F12/0804

Abstract: A method of accessing a nonvolatile memory device which includes a memory block where semiconductor layers including word lines are stacked includes receiving a write request for the memory block, determining whether the write request corresponds to one or more leading word lines, programming, in response to the write request determined as corresponding to the leading word lines, memory cells connected thereto in a first program mode, and programming, when the write request is determined as corresponding to a following word line different from the leading word lines, memory cells connected to the following word line in a second program mode. The second program mode is performed with a second program parameter including at least one of a number of program pulses, a number of program verify pulses, a program start voltage, and a program end voltage that is different from a corresponding first parameter of the first program mode.