-
1.发明公开公开(公告)号：US20240055030A1
公开(公告)日：2024-02-15
申请号：US18204972
申请日：2023-06-02
Applicant: Samsung Electronics Co., Ltd.
Inventor： Younsoo Cheon , Jihwa Lee , Kyungduk Lee
CPC classification number: G11C7/04 , G11C11/5642 , G11C11/5628
Abstract: A storage device including a non-volatile memory for storing data, a temperature sensor having resistance that changes according to temperature of the temperature sensor, and a temperature measurement circuit including a plurality of transistors, which are turned on or off based on a current of the temperature sensor and have different threshold voltages from one another. The temperature management circuit may be configured to apply a current to the temperature sensor and generate information indicating the temperature of the temperature sensor or indicating damage to the temperature sensor based on an output current obtained from the plurality of transistors.
-
公开(公告)号：US11195583B2
公开(公告)日：2021-12-07
申请号：US16736881
申请日：2020-01-08
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jihong Kim , Kyungduk Lee , Young-Seop Shim , Kirock Kwon , Myoung Seok Kim
Abstract: A method of accessing a nonvolatile memory device which includes a memory block where semiconductor layers including word lines are stacked includes receiving a write request for the memory block, determining whether the write request corresponds to one or more leading word lines, programming, in response to the write request determined as corresponding to the leading word lines, memory cells connected thereto in a first program mode, and programming, when the write request is determined as corresponding to a following word line different from the leading word lines, memory cells connected to the following word line in a second program mode. The second program mode is performed with a second program parameter including at least one of a number of program pulses, a number of program verify pulses, a program start voltage, and a program end voltage that is different from a corresponding first parameter of the first program mode.
-
公开(公告)号：US20250014658A1
公开(公告)日：2025-01-09
申请号：US18598988
申请日：2024-03-07
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Youhwan Kim , Kyungduk Lee , Suyong Jang , Hankyu Ko , Ho-Sung Ahn
Abstract: The present disclosure relates to storage devices. An example storage device includes a nonvolatile memory device that includes a plurality of memory blocks, and a memory controller that controls the nonvolatile memory device. The memory controller performs a soft erase operation on a first memory block among the plurality of memory blocks, measures a first cell count by applying a first reference voltage to a plurality of first memory cells selected in advance from a plurality of memory cells of the first memory block after performing the soft erase operation, generates a first health index associated with a retention characteristic of the first memory block based on the first cell count, and performs a reliability management operation on the first memory block based on the first health index.
-
公开(公告)号：US11966624B2
公开(公告)日：2024-04-23
申请号：US17720141
申请日：2022-04-13
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jongsung Na , Youngseop Shim , Kyungduk Lee , Sangho Yi
CPC classification number: G06F3/0655 , G06F3/0604 , G06F3/0679
Abstract: A storage device and an operating method thereof are provided. The storage device includes a memory configured to store parameter data used as an input in a neural network. The storage device also includes a storage controller configured to receive a request signal from a host. The storage controller is also configured to encode, based on the parameter data, log data in the neural network, the log data indicating contexts of the plurality of components, and transmit the encoded log data to the host.
-
公开(公告)号：US20240012703A1
公开(公告)日：2024-01-11
申请号：US18134096
申请日：2023-04-13
Applicant: Samsung Electronics Co., Ltd.
Inventor： Kyungduk Lee , Youn-Soo Cheon
IPC: G06F11/07
CPC classification number: G06F11/076 , G06F11/0793 , G06F11/073
Abstract: An operating method of a storage controller which is configured to communicate with a host and with a non-volatile memory device. The method may include: generating an error count by counting a number of first-type error bits of a target super block of the non-volatile memory device, determining whether the error count exceeds a first reference value, fetching setting data from a latch unit of the non-volatile memory device, based on determining that the error count exceeds the first reference value, determining whether reference setting data of a setting table matches the fetched setting data, the reference setting data indicating information about a designed operating environment of the non-volatile memory device, and providing a reset request to the latch unit, based on determining that the reference setting data does not match the fetched setting data.
-
Patent Agency Ranking
公开(公告)号：US11748223B2
公开(公告)日：2023-09-05
申请号：US17563662
申请日：2021-12-28
Applicant: Samsung Electronics Co., Ltd.
Inventor： Kyungduk Lee , Younsoo Cheon , Jihwa Lee
CPC classification number: G06F11/3058 , G06F3/0614 , G06F11/076 , G06F11/3037 , G06F12/0246 , G06F12/0882
Abstract: A method of operating a storage device including a plurality of nonvolatile memories, each of the plurality of nonvolatile memories including a temperature sensor, includes checking whether a predetermined temperature check cycle for the plurality of nonvolatile memories has been reached, monitoring, in response to the checking result, temperature information of at least some of the plurality of nonvolatile memories using the temperature sensor, obtaining standing time information of the plurality of nonvolatile memories by applying a temperature acceleration condition based on the monitored temperature information, and changing at least one of a plurality of driving parameters required for operating each of the plurality of nonvolatile memories based on at least one of the monitored temperature information and the obtained standing time information.
-
公开(公告)号：US11727991B2
公开(公告)日：2023-08-15
申请号：US17378202
申请日：2021-07-16
Applicant: Samsung Electronics Co., Ltd.
Inventor： Youhwan Kim , Kyungduk Lee
CPC classification number: G11C16/08 , G06F12/0238 , G11C16/0483 , G11C16/26 , G11C16/32 , G06F2212/202
Abstract: An operating method of a storage device includes monitoring a temperature of a nonvolatile memory device including a plurality of memory blocks, receiving a first request from a host, in response to the first request, transmitting a first command to the nonvolatile memory device when a first memory block corresponding to the first request is exposed at a temperature of a threshold temperature or higher for a first time period that is equal to or greater than a threshold time period and a second command to the nonvolatile memory device when the first memory block is exposed at a temperature lower than the threshold temperature for the threshold time period, charging word lines of the first memory block with a driving voltage in response to the first command, and performing a first operation corresponding to the first request in response to the first command or the second command.
-
公开(公告)号：US20250036288A1
公开(公告)日：2025-01-30
申请号：US18600370
申请日：2024-03-08
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Seohyun Shin , Kyungduk Lee , Sanghwa Jin
IPC: G06F3/06
Abstract: A method of providing an exposure temperature includes generating reference information indicating relationships between an exposure condition and a retention value, where the exposure condition include an exposure temperature and an exposure time of a nonvolatile memory device and the retention value indicates retention characteristic of the nonvolatile memory device, before a power-off time point when the nonvolatile memory device is powered-off, performing a monitoring program operation to write monitoring data in target memory cells included in the nonvolatile memory device, after a power-on time point when the nonvolatile memory device is powered on, generating a measured retention value by performing a monitoring read operation to read data from the target memory cells, and estimating, based on the reference information, a measured exposure temperature corresponding to the measured retention value and a measured exposure time between the power-off time point and the power-on time point.
-
公开(公告)号：US12210406B2
公开(公告)日：2025-01-28
申请号：US17718523
申请日：2022-04-12
Applicant: Samsung Electronics Co., Ltd.
Inventor： Kyungduk Lee , Youngseop Shim , Jongsung Na , Inhwan Doh
Abstract: A storage device and operating method thereof includes a storage controller configured to receive a get log page command from a host and transmit, to the host, log data about at least one context selected from among respective contexts of a plurality of components according to the get log page command, and a memory storing the log data, wherein the get log page command includes selection information for selecting at least one component from among the plurality of components.
-
公开(公告)号：US11941271B2
公开(公告)日：2024-03-26
申请号：US17583713
申请日：2022-01-25
Applicant: Samsung Electronics Co., Ltd.
Inventor： Youhwan Kim , Jihwa Lee , Kyungduk Lee , Hosung Ahn
IPC: G06F3/06
CPC classification number: G06F3/064 , G06F3/0608 , G06F3/0679
Abstract: A storage device performing a secure erase and an operating method thereof are provided. The storage device may include a controller configured to control a non-volatile memory device including a plurality of blocks. The controller includes a secure erase control logic configured to control a secure erase operation on the plurality of blocks and perform a control operation in response to a secure erase request from a host with respect to a first block among the plurality of blocks such that the secure erase operation on the first block is skipped based on a result of determining at least one selected from a secure erase state and/or a deterioration state of the first block.
-
-
-
-
-
-
-
-
-
Search Results
29
records
(took 0.02 seconds)
