公开(公告)号：US20240313049A1

公开(公告)日：2024-09-19

申请号：US18394926

申请日：2023-12-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Byounghoon KIM ,  Hyunwoong KIM ,  Sungsik PARK ,  Jonghwa BAEK ,  KyungMin SUH ,  Hyunju SONG ,  Myoungki JUNG

IPC: H01L29/06 ,  H01L27/092 ,  H01L29/417 ,  H01L29/423 ,  H01L29/66 ,  H01L29/775 ,  H01L29/786

CPC classification number: H01L29/0673 ,  H01L27/092 ,  H01L29/41733 ,  H01L29/42392 ,  H01L29/6656 ,  H01L29/775 ,  H01L29/78696

Abstract: A semiconductor device includes a substrate having a key region therein, a device isolation layer on the key region, first key patterns on the device isolation layer, and a dummy key pattern extending between the first key patterns, which are adjacent to each other. The first key patterns include a plurality of first sub-key patterns, and the dummy key pattern includes a separation structure, which extends into the device isolation layer and through at least one of the plurality of first sub-key patterns. A first pitch between the plurality of first sub-key patterns may be substantially the same as a second pitch between the separation structure and one of the plurality of first sub-key patterns adjacent thereto.