公开(公告)号：US20140308797A1

公开(公告)日：2014-10-16

申请号：US14315991

申请日：2014-06-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Myung Jin KANG

IPC: H01L45/00

CPC classification number: H01L45/1683 ,  H01L27/2409 ,  H01L27/2436 ,  H01L27/2445 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/143 ,  H01L45/144 ,  H01L45/16 ,  H01L45/1608

Abstract: A method of forming a variable resistive memory device includes forming a conductive pattern that alternates with a first insulation pattern along a first direction on a substrate that is parallel with a surface of the substrate, forming a preliminary sacrificial pattern on the conductive pattern that contacts a sidewall of the first insulation pattern, etching the conductive pattern using the preliminary sacrificial pattern as an etch masks to form a preliminary bottom electrode pattern, patterning the preliminary sacrificial pattern and the preliminary bottom electrode pattern to form a sacrificial pattern and a bottom electrode pattern that each include at least two portions which are separated from each other along a second direction intersecting the first direction, and replacing the sacrificial pattern with a variable resistive pattern.

Abstract translation: 一种形成可变电阻式存储器件的方法包括：在与衬底的表面平行的衬底上沿第一方向形成与第一绝缘图案交替的导电图案，在与衬底的表面平行的衬底上形成初步牺牲图案， 第一绝缘图案的侧壁，使用预备牺牲图案蚀刻导电图案作为蚀刻掩模以形成初步底部电极图案，图案化初步牺牲图案和预备底部电极图案以形成牺牲图案和底部电极图案， 每个包括沿着与第一方向相交的第二方向彼此分离的至少两个部分，并且以可变电阻图案替换牺牲图案。

公开(公告)号：US20140113429A1

公开(公告)日：2014-04-24

申请号：US14143760

申请日：2013-12-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Myung Jin KANG ,  Youngnam HWANG

IPC: H01L45/00

CPC classification number: H01L45/1683 ,  H01L27/2409 ,  H01L45/06

Abstract: According to example embodiments, a variable resistance memory device include an ohmic pattern on a substrate; a first electrode pattern including a first portion that has a plate shape and contacts a top surface of the ohmic pattern and a second portion that extends from one end of the first portion to a top; a variable resistance pattern electrically connected to the first electrode pattern; and a second electrode pattern electrically connected to the variable resistance pattern, wherein one end of the ohmic pattern and the other end of the first portion are disposed on the same plane.

Abstract translation: 根据示例实施例，可变电阻存储器件在衬底上包括欧姆图案; 第一电极图案，包括具有板形并接触欧姆图案的顶表面的第一部分和从第一部分的一端延伸到顶部的第二部分; 电连接到第一电极图案的可变电阻图案; 以及电连接到所述可变电阻图案的第二电极图案，其中所述欧姆图案的一端和所述第一部分的另一端设置在同一平面上。