公开(公告)号：US20160035794A1

公开(公告)日：2016-02-04

申请号：US14812264

申请日：2015-07-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yun Jeong KIM ,  Sang Chul SUL ,  Chung Kun SONG ,  Myung Won LEE ,  Tae Yon LEE ,  Gi Seong RYU ,  Seung Hyeon JEONG ,  Chang Min JEONG ,  Hyun Ji JO

IPC: H01L27/30 ,  H04N5/225 ,  G01J1/44 ,  H04N5/378 ,  H01L51/42 ,  H01L51/44

CPC classification number: H01L27/307 ,  G01J1/44 ,  G01J2001/446 ,  H01L51/424 ,  H01L51/428 ,  H01L51/441 ,  H04N5/378 ,  Y02E10/549

Abstract: A photocharge storage element includes a gate insulator formed on a gate electrode, a channel formed on the gate insulator between a source electrode and a drain electrode, and an organic photoelectric conversion element formed on the channel. The organic photoelectric conversion element generates photocharges in response to light. The channel accumulates the photocharges generated by the organic photoelectric conversion element. The photocharges accumulated in the channel are read out from the channel in response to a voltage between the source electrode and the drain electrode.

Abstract translation: 光电荷存储元件包括形成在栅电极上的栅极绝缘体，形成在源电极和漏极之间的栅绝缘体上的沟道和形成在沟道上的有机光电转换元件。 有机光电转换元件响应于光而产生光电荷。 该通道累积由有机光电转换元件产生的光电荷。 响应于源电极和漏电极之间的电压，从沟道中读出累积在通道中的光电荷。