公开(公告)号：US09300887B2

公开(公告)日：2016-03-29

申请号：US14256106

申请日：2014-04-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Gwi-Deok Lee ,  Kyung-Ho Lee ,  Hiroshige Goto ,  Sae-Young Kim ,  Sang-Chul Sul ,  Myung-Won Lee

IPC: H04N5/355

CPC classification number: H04N5/3559 ,  H04N5/35509

Abstract: An image sensor includes a photoelectric conversion unit, a signal generation unit, and a feedback unit. The photoelectric conversion unit is formed above a substrate and detects incident light to generate photo-charges based on a drive voltage. The signal generation unit is formed on the substrate and generates an analog signal based on the photo-charges. The feedback unit generates the drive voltage based on an amount of the photo-charges generated from the photoelectric conversion unit. The image sensor may perform a wide dynamic range (WDR) function.

Abstract translation: 图像传感器包括光电转换单元，信号生成单元和反馈单元。 光电转换单元形成在基板上方，并根据驱动电压检测入射光以产生光电荷。 信号生成单元形成在基板上，并且基于光电荷产生模拟信号。 反馈单元基于从光电转换单元生成的光电荷的量来产生驱动电压。 图像传感器可以执行宽动态范围（WDR）功能。

公开(公告)号：US09385166B2

公开(公告)日：2016-07-05

申请号：US14596464

申请日：2015-01-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jung-Kyu Jung ,  Sang-Chul Sul ,  Gwi-Deok Lee ,  Tae-Yon Lee ,  Myung-Won Lee

IPC: H01L27/148 ,  H01L27/30 ,  H01L27/146 ,  H01L27/28

CPC classification number: H01L27/307 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/1463 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14665 ,  H01L27/286

Abstract: An image sensor includes a semiconductor layer, an organic photoelectric conversion portion disposed on an upper surface of the semiconductor layer and that converts a color component of incident light into a corresponding electrical signal, a transistor layer disposed on a lower surface of the semiconductor layer and including a pixel circuit that receives the electrical signal, and penetration wiring that laterally penetrates a side surface of the semiconductor layer between the upper and lower surfaces and that electrically connects the organic photoelectric conversion portion with the pixel circuit to communicate the electrical signal.

Abstract translation: 图像传感器包括半导体层，设置在半导体层的上表面上并将入射光的颜色分量转换为对应的电信号的有机光电转换部，设置在半导体层的下表面上的晶体管层，以及 包括接收电信号的像素电路和横向穿透上下表面之间的半导体层的侧表面的穿透布线，并且将有机光电转换部与像素电路电连接以传送电信号。

公开(公告)号：US20140313383A1

公开(公告)日：2014-10-23

申请号：US14256106

申请日：2014-04-18

Applicant: Samsung Electronics Co, Ltd.

Inventor： Gwi-Deok Lee ,  Kyung-Ho Lee ,  Hiroshige Goto ,  Sae-Young Kim ,  Sang-Chul Sul ,  Myung-Won Lee

IPC: H04N5/335

CPC classification number: H04N5/3559 ,  H04N5/35509

Abstract: An image sensor includes a photoelectric conversion unit, a signal generation unit, and a feedback unit. The photoelectric conversion unit is formed above a substrate and detects incident light to generate photo-charges based on a drive voltage. The signal generation unit is formed on the substrate and generates an analog signal based on the photo-charges. The feedback unit generates the drive voltage based on an amount of the photo-charges generated from the photoelectric conversion unit. The image sensor may perform a wide dynamic range (WDR) function.

Abstract translation: 图像传感器包括光电转换单元，信号生成单元和反馈单元。 光电转换单元形成在基板上方，并根据驱动电压检测入射光以产生光电荷。 信号生成单元形成在基板上，并且基于光电荷产生模拟信号。 反馈单元基于从光电转换单元生成的光电荷的量来产生驱动电压。 图像传感器可以执行宽动态范围（WDR）功能。