公开(公告)号：US20250006770A1

公开(公告)日：2025-01-02

申请号：US18735325

申请日：2024-06-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jihun Lim ,  Jinyoung Kim ,  Myunghae Seo ,  Sungki Min ,  Chang Kyu Lee

IPC: H01L27/146

Abstract: A dual vertical transfer gate, a transistor including the same, and a CMOS image sensing device including the same. In some embodiments, a gate of the dual vertical transfer transistor may include a pair of poles, which are extended to an n-type region of a photodiode, and a connecting portion, which connects the paired poles to each other. A first insulating pattern may be provided between the poles and on the substrate.