公开(公告)号：US20200075338A1

公开(公告)日：2020-03-05

申请号：US16393232

申请日：2019-04-24

Applicant: Samsung Electronics Co., Ltd. ,  EO Technics Co., LTD

Inventor： Nam Hoon LEE ,  Ill Hyun PARK ,  Tae Hee HAN ,  Jin Won MA ,  Byung Joo OH ,  Bong Ju LEE ,  Jae Hee LEE ,  Joo Yong LEE ,  Nam Ki CHO ,  Chang Seong HONG

IPC: H01L21/268 ,  B23K26/354 ,  B23K26/03 ,  H01L21/67 ,  H01L21/66 ,  G01N21/25

Abstract: Provided are a monitoring device and method. A monitoring device includes a laser processor configured to emit a processing laser beam to perform a melting annealing process on a wafer; a laser monitor configured to emit a monitoring laser beam onto the wafer while the laser processor performs the melting annealing process, the laser monitor configured to measure reflectivity of the wafer; and a data processor configured to process data on the reflectivity measured by the laser monitor, and monitor one or more characteristics of the wafer based on the data on the reflectivity.

公开(公告)号：US20220076957A1

公开(公告)日：2022-03-10

申请号：US17479256

申请日：2021-09-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Nam Hoon LEE ,  Ill Hyun PARK ,  Tae Hee HAN ,  Jin Won MA ,  Byung Joo OH ,  Bong Ju LEE ,  Jae Hee LEE ,  Joo Yong LEE ,  Nam Ki CHO ,  Chang Seong HONG

IPC: H01L21/268 ,  B23K26/354 ,  G01N21/25 ,  H01L21/67 ,  H01L21/66 ,  B23K26/03

Abstract: Provided are a monitoring device and method. A monitoring device includes a laser processor configured to emit a processing laser beam to perform a melting annealing process on a wafer; a laser monitor configured to emit a monitoring laser beam onto the wafer while the laser processor performs the melting annealing process, the laser monitor configured to measure reflectivity of the wafer; and a data processor configured to process data on the reflectivity measured by the laser monitor, and monitor one or more characteristics of the wafer based on the data on the reflectivity.