公开(公告)号：US20230112776A1

公开(公告)日：2023-04-13

申请号：US17889117

申请日：2022-08-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dae-Jeong KIM ,  Tae-Kyeong KO ,  Nam Hyung KIM ,  Do-Han KIM ,  Deokho SEO ,  Ho-Young LEE ,  Insu CHOI

IPC: G06F3/06

Abstract: An operation method of a memory controller, which is configured to control a memory module including a plurality of memory devices and at least one error correction code (ECC) device, is provided. The method includes reading a data set including user data stored in the plurality of memory devices and ECC data stored in the at least one ECC device, based on a read command and a first address, and writing uncorrectable data in a memory area, which is included in each of the plurality of memory devices and the at least one ECC device and corresponds to the first address, when an error of the user data is not corrected based on the ECC data.

公开(公告)号：US20220208237A1

公开(公告)日：2022-06-30

申请号：US17407585

申请日：2021-08-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chang Min LEE ,  Nam Hyung KIM ,  Dae Jeong KIM ,  Do Han KIM ,  Min Su KIM ,  Deok Ho SEO ,  Won Jae SHIN ,  Yong Jun YU ,  Il Gyu JUNG ,  In Su CHOI

IPC: G11C7/10 ,  G11C7/14 ,  G11C8/18

Abstract: An electronic device including a memory device with improved reliability is provided. The semiconductor device comprises a data pin configured to transmit a data signal, a command/address pin configured to transmit a command and an address, a command/address receiver connected to the command/address pin, and a computing unit connected to the command/address receiver, wherein the command/address receiver receives a first command and a first address from the outside through the command/address pin and generates a first instruction on the basis of the first command and the first address, and the computing unit receives the first instruction and performs computation based on the first instruction.

公开(公告)号：US20220215866A1

公开(公告)日：2022-07-07

申请号：US17480359

申请日：2021-09-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yong Jun YU ,  Nam Hyung KIM ,  Do-Han KIM ,  Min Su KIM ,  Deok Ho SEO ,  Won Jae SHIN ,  Chang Min LEE ,  Il Gyu JUNG ,  In Su CHOI

IPC: G11C7/10 ,  G11C7/22

Abstract: A semiconductor device including a memory device which has improved reliability is provided. The semiconductor device comprises at least one data pin configured to transfer a data signal, at least one command address pin configured to transfer a command and an address, at least one serial pin configured to transfer a serial data signal, and processing circuitry connected to the at least one data pin and the at least one serial pin. The processing circuitry is configured to receive the data signal from outside through the at least one data pin, and the processing circuitry is configured to output the serial data signal through the at least one serial pin in response to the received data signal.

公开(公告)号：US20170283974A1

公开(公告)日：2017-10-05

申请号：US15430728

申请日：2017-02-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Nam Hyung KIM ,  Kimura HIRONORI ,  Bomina SONG

IPC: C25D11/16 ,  C25D11/24

CPC classification number: C25D11/16 ,  C25D11/08 ,  C25D11/243 ,  C25D11/246

Abstract: According to an aspect of the present invention, there is provided an aluminum product. The Aluminum product may comprise an aluminum substrate configured to include a pattern and a white aluminum fluoride (AlF3) film on a surface thereof; and an anodized film configured to be disposed adjacent to the white aluminum fluoride (AlF3) film and include a plurality of pores.