公开(公告)号：US20250159962A1

公开(公告)日：2025-05-15

申请号：US18670794

申请日：2024-05-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hee Chan Song ,  Dohyung Kim ,  Dongsoo Lee ,  Hyeji Lee ,  Philjong Song ,  Yonghyuk Choi

IPC: H01L29/423

Abstract: A semiconductor device includes a substrate having a first active region and a second active region, a first gate conductive pattern that extends conformally in a first recess in the first active region, and a second gate conductive pattern that at least partially fills a second recess in the second active region. The first gate conductive pattern has a first thickness in a horizontal direction on an inner lateral surface of the first recess. The second gate conductive pattern has a second thickness in the horizontal direction on an inner lateral surface of the second recess. The first thickness is less than the second thickness.