公开(公告)号：US20250159962A1

公开(公告)日：2025-05-15

申请号：US18670794

申请日：2024-05-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hee Chan Song ,  Dohyung Kim ,  Dongsoo Lee ,  Hyeji Lee ,  Philjong Song ,  Yonghyuk Choi

IPC: H01L29/423

Abstract: A semiconductor device includes a substrate having a first active region and a second active region, a first gate conductive pattern that extends conformally in a first recess in the first active region, and a second gate conductive pattern that at least partially fills a second recess in the second active region. The first gate conductive pattern has a first thickness in a horizontal direction on an inner lateral surface of the first recess. The second gate conductive pattern has a second thickness in the horizontal direction on an inner lateral surface of the second recess. The first thickness is less than the second thickness.

公开(公告)号：US11894079B2

公开(公告)日：2024-02-06

申请号：US17384219

申请日：2021-07-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyeji Lee ,  Raeyoung Lee ,  Jinkyu Kang ,  Sejun Park ,  Jaeduk Lee

IPC: G11C16/34 ,  G11C16/26 ,  G11C16/10

CPC classification number: G11C16/3463 ,  G11C16/102 ,  G11C16/26 ,  G11C16/3404

Abstract: A memory controller includes an over-program controller that preprograms and then erases the memory cells such that each of the memory cells has a first threshold voltage level, wherein fast cells are detected among the memory cells according to a threshold voltage less than or equal to a second threshold voltage less than the first threshold voltage, and a processor that generates fast cell information identifying the fast cells among the memory cells and stores the fast cell information in a buffer. The over-program controller controls the over-programming of the fast cells and normal programming of normal cells among the memory cells based on the fast cell information stored in the buffer.