公开(公告)号：US20240161816A1

公开(公告)日：2024-05-16

申请号：US18377751

申请日：2023-10-06

申请人： Samsung Electronics Co., Ltd.

发明人： SEONGJIN KIM ,  SANG-WAN NAM ,  Sungho MOON

IPC分类号： G11C11/4099 ,  G11C5/14 ,  G11C11/4074 ,  G11C11/4096

CPC分类号： G11C11/4099 ,  G11C5/147 ,  G11C11/4074 ,  G11C11/4096

摘要： A memory device may include a reference voltage generator that generates a reference voltage, a voltage regulator that includes a plurality of driving blocks generating an internal voltage based on the reference voltage, and a power line that receives the internal voltage. At least one of the plurality of driving blocks may include a first unit driver that generates a first output current flowing through the power line based on the reference voltage and a change in the internal voltage, and a second unit driver that generates a second output current larger than the first output current flowing through the power line, based on the reference voltage and the change in the internal voltage. The first unit driver may generate the first output current faster than the second output current of the second unit driver.