公开(公告)号：US20200052116A1

公开(公告)日：2020-02-13

申请号：US16508774

申请日：2019-07-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： SEUNG KWON KIM ,  Yuri Masuoka

IPC: H01L29/78 ,  H01L27/092 ,  H01L29/08 ,  H01L29/165 ,  H01L29/36 ,  H01L29/10 ,  H01L29/16

Abstract: A semiconductor device is provided. The semiconductor device includes a substrate including first through third regions, a first transistor of a first conductivity type disposed on the first region of the substrate and including a first channel layer, in which the first channel layer includes a first material, a second transistor of a second conductivity type different from the first conductivity type disposed on the second region of the substrate and including a second channel layer, in which the second channel layer includes the first material, and a third transistor of the second conductivity type disposed on the third region of the substrate and including a third channel layer, in which the third channel layer includes a second material different from the first material.