公开(公告)号：US20190122903A1

公开(公告)日：2019-04-25

申请号：US15972350

申请日：2018-05-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： SEUNG BO SHIM ,  HYUK KIM ,  SUN TAEK LIM ,  JAE MYUNG CHOE ,  JEON IL LEE ,  SUNG-IL CHO

IPC: H01L21/67 ,  H01L21/683 ,  H01J37/32 ,  H01L21/3065

Abstract: Provided are a plasma treatment apparatus and a method of fabricating semiconductor device using the same. The plasma treatment apparatus includes a chamber which provides a plasma treatment space, a bottom electrode disposed in the chamber and supports a wafer, a top electrode disposed in the chamber facing the bottom electrode, a source power source which supplies a source power output of a first frequency to the bottom electrode, a bias power source which supplies a bias power output of a second frequency different from the first frequency to the bottom electrode, and a pulse power source which applies a pulse voltage to the bottom electrode, wherein the bias power output is a bias voltage which is pulse-modulated to a first voltage level in a first time section and pulse-modulated to a second voltage level in a second time section and is applied to the bottom electrode.