公开(公告)号：US20230044703A1

公开(公告)日：2023-02-09

申请号：US17972798

申请日：2022-10-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： SEUNG BO SHIM ,  DOUG YONG SUNG ,  YOUNG JIN NOH ,  YONG WOO LEE ,  JI SOO IM ,  HYEONG MO KANG ,  PETER BYUNG H HAN ,  CHEON KYU LEE ,  MASATO HORIGUCHI

IPC: H01J37/32 ,  H01L21/683 ,  H03H7/38 ,  H03H7/01 ,  H01L21/67

Abstract: Plasma processing equipment includes a chuck stage for supporting a wafer and including a lower electrode, an upper electrode disposed on the chuck stage, an AC power supply which applies first to third signals having different magnitudes of frequencies to the upper electrode or the lower electrode, a dielectric ring which surrounds the chuck stage, an edge electrode located within the dielectric ring, and a resonance circuit connected to the edge electrode. The resonance circuit includes a filter circuit which allows only the third signal among the first to third signals to pass, and a series resonance circuit connected in series with the filter circuit and having a first coil and a first variable capacitor connected in series and grounded.

公开(公告)号：US20190122903A1

公开(公告)日：2019-04-25

申请号：US15972350

申请日：2018-05-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： SEUNG BO SHIM ,  HYUK KIM ,  SUN TAEK LIM ,  JAE MYUNG CHOE ,  JEON IL LEE ,  SUNG-IL CHO

IPC: H01L21/67 ,  H01L21/683 ,  H01J37/32 ,  H01L21/3065

Abstract: Provided are a plasma treatment apparatus and a method of fabricating semiconductor device using the same. The plasma treatment apparatus includes a chamber which provides a plasma treatment space, a bottom electrode disposed in the chamber and supports a wafer, a top electrode disposed in the chamber facing the bottom electrode, a source power source which supplies a source power output of a first frequency to the bottom electrode, a bias power source which supplies a bias power output of a second frequency different from the first frequency to the bottom electrode, and a pulse power source which applies a pulse voltage to the bottom electrode, wherein the bias power output is a bias voltage which is pulse-modulated to a first voltage level in a first time section and pulse-modulated to a second voltage level in a second time section and is applied to the bottom electrode.

公开(公告)号：US20190304754A1

公开(公告)日：2019-10-03

申请号：US16361341

申请日：2019-03-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： SEUNG BO SHIM ,  DOUG YONG SUNG ,  YOUNG JIN NOH ,  YONG WOO LEE ,  JI SOO IM ,  HYEONG MO KANG ,  PETER BYUNG H HAN ,  CHEON KYU LEE ,  MASATO HORIGUCHI

IPC: H01J37/32 ,  H01L21/683 ,  H03H7/38 ,  H01L21/67 ,  H03H7/01

Abstract: Plasma processing equipment includes a chuck stage for supporting a wafer and including a lower electrode, an upper electrode disposed on the chuck stage, an AC power supply which applies first to third signals having different magnitudes of frequencies to the upper electrode or the lower electrode, a dielectric ring which surrounds the chuck stage, an edge electrode located within the dielectric ring, and a resonance circuit connected to the edge electrode. The resonance circuit includes a filter circuit which allows only the third signal among the first to third signals to pass, and a series resonance circuit connected in series with the filter circuit and having a first coil and a first variable capacitor connected in series and grounded.

公开(公告)号：US20220005671A1

公开(公告)日：2022-01-06

申请号：US17148037

申请日：2021-01-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： SEUNG BO SHIM ,  DOUG YONG SUNG ,  HO-JUN LEE ,  JEE HUN JEONG ,  SUNG HWAN CHO ,  JU-HONG CHA

IPC: H01J37/32

Abstract: An inductively coupled plasma processing apparatus includes a lower chamber providing a space for a substrate, a high-frequency antenna configured to generate inductively coupled plasma in the lower chamber, dielectric windows disposed between the lower chamber and the high-frequency antenna, metal windows alternatingly disposed between the dielectric windows, and gas inlet pipes disposed in each of the metal windows, wherein each of the gas inlet pipes includes nozzles configured to introduce gases to the lower chamber.

公开(公告)号：US20220139669A1

公开(公告)日：2022-05-05

申请号：US17242019

申请日：2021-04-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： YOONG CHUNG ,  NAM KYUN KIM ,  NAOHIKO OKUNISHI ,  KYUNG-SUN KIM ,  SEUNG BO SHIM ,  SANG-HO LEE ,  KANG MIN JEON

IPC: H01J37/32 ,  H01L21/311

Abstract: A plasma processing apparatus includes; a chamber, a lower electrode disposed within the chamber and including a lower surface and an opposing upper surface configured to seat a wafer, an RF rod disposed on the lower surface of the lower electrode and extending in a vertical direction. The RF plate includes a first portion contacting the lower surface of the lower electrode, a second portion protruding from the first portion towards the RF rod, and a third portion extending from the second portion to connect the RF rod. A grounding electrode is spaced apart from the RF plate and at least partially surrounds a side wall of the RF rod and a side wall of the second portion of the RF plate. The grounding electrode includes a first grounding electrode facing each of the side wall of the RF rod and the second portion of the RF plate, and a second grounding electrode at least partially surrounding the first grounding electrode, and configured to horizontally rotate.