公开(公告)号：US20210225423A1

公开(公告)日：2021-07-22

申请号：US17143619

申请日：2021-01-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： BYONGMO MOON ,  SUNGOH AHN

IPC: G11C11/4074 ,  H01L25/18 ,  H01L23/00 ,  G11C11/4093 ,  G11C11/4096 ,  G06F1/10 ,  G06F1/26

Abstract: Disclosed is a memory device, which includes a buffer die that outputs a first power supply voltage to a first through-substrate via (e.g., through-silicon via (TSV)) and receives a small swing data signal from a second TSV generated based on the first power supply voltage, and a core die that is electrically connected to the buffer die through the first and second TSVs, includes a first cell capacitor electrically connected to the first TSV and configured to block a first noise introduced to the first power supply voltage received through the first TSV. The core die outputs the small swing data signal to the second TSV.