公开(公告)号：US20210397080A1

公开(公告)日：2021-12-23

申请号：US17157229

申请日：2021-01-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang Chul Yeo

IPC: G03F1/36 ,  G03F7/20 ,  H01L21/027

Abstract: A semiconductor device fabrication method includes providing a layout; performing an optical proximity correction on the layout to generate a corrected layout; and forming a photoresist pattern on a substrate by using a photomask fabricated with the corrected layout. The OPC may include: extracting edges of a pattern, the edges including a first edge and a second edge that converge to define a corner; generating a thin mask image by applying a thin mask approximation to the pattern; changing the first edge and the second edge into a first stepped edge and a second stepped edge; and applying a three-dimensional filter to the first and second stepped edges to generate an optical image including the corrected layout of the pattern to which the 3D filter is applied from the thin mask image.

公开(公告)号：US11238208B2

公开(公告)日：2022-02-01

申请号：US17157229

申请日：2021-01-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang Chul Yeo

IPC: G06F30/30 ,  G03F1/36 ,  G03F7/20 ,  G06F30/398 ,  H01L21/027 ,  G06F111/10 ,  G06F119/18

Abstract: A semiconductor device fabrication method includes providing a layout; performing an optical proximity correction on the layout to generate a corrected layout; and forming a photoresist pattern on a substrate by using a photomask fabricated with the corrected layout. The OPC may include: extracting edges of a pattern, the edges including a first edge and a second edge that converge to define a corner; generating a thin mask image by applying a thin mask approximation to the pattern; changing the first edge and the second edge into a first stepped edge and a second stepped edge; and applying a three-dimensional filter to the first and second stepped edges to generate an optical image including the corrected layout of the pattern to which the 3D filter is applied from the thin mask image.

公开(公告)号：US12092961B2

公开(公告)日：2024-09-17

申请号：US17537700

申请日：2021-11-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang Chul Yeo ,  Dongwon Kang

IPC: G03F7/00 ,  G03F1/24 ,  G06F30/30

CPC classification number: G03F7/70441 ,  G03F1/24 ,  G03F7/70033 ,  G06F30/30

Abstract: Provided is an extreme ultraviolet (EUV) mask manufacturing method of forming an optimum pattern on a wafer by efficiently reflecting a mask topography effect or a coupling effect between edges of a pattern and improving the accuracy of an EUV mask image. The EUV mask manufacturing method includes performing an optical proximity correction (OPC) method for obtaining EUV mask design data, transferring the EUV mask design data as mask tape-out (MTO) design data, preparing mask data based on the MTO design data, and completing an EUV mask by exposing an EUV mask substrate based on the mask data, wherein the performing of the OPC method applies a coupling filter to both a first case in which angles of an edge pair satisfy |θ1−θ2|=0, and a second case in which angles of an edge pair satisfy 0

公开(公告)号：US20220326622A1

公开(公告)日：2022-10-13

申请号：US17537700

申请日：2021-11-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang Chul Yeo ,  Dongwon Kang

IPC: G03F7/20 ,  G03F1/24 ,  G06F30/30

Abstract: Provided is an extreme ultraviolet (EUV) mask manufacturing method of forming an optimum pattern on a wafer by efficiently reflecting a mask topography effect or a coupling effect between edges of a pattern and improving the accuracy of an EUV mask image. The EUV mask manufacturing method includes performing an optical proximity correction (OPC) method for obtaining EUV mask design data, transferring the EUV mask design data as mask tape-out (MTO) design data, preparing mask data based on the MTO design data, and completing an EUV mask by exposing an EUV mask substrate based on the mask data, wherein the performing of the OPC method applies a coupling filter to both a first case in which angles of an edge pair satisfy |θ1−θ2|=0, and a second case in which angles of an edge pair satisfy 0

公开(公告)号：US11023651B2

公开(公告)日：2021-06-01

申请号：US16693903

申请日：2019-11-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang Chul Yeo

IPC: G06F30/398 ,  H01L21/027 ,  G03F1/36 ,  H01L21/266 ,  H01L21/265

Abstract: A method for manufacturing a semiconductor device includes performing an optical proximity correction (OPC) process on a designed layout based on a final model signal obtained according to an OPC modeling process to generate a corrected layout, the OPC modeling process including, selecting a transmittance value of a sub-layout pattern of a sub-layout included in a target layout, the transmittance value being a parameter of an OPC model and representing an intensity of light that transmits through a photomask, and generating a final model signal based on the transmittance value of the sub-layout pattern, and forming a photoresist pattern on a substrate using the photomask generated based on the corrected layout.