公开(公告)号：US12027586B2

公开(公告)日：2024-07-02

申请号：US18347090

申请日：2023-07-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Cho-eun Lee ,  Seok-hoon Kim ,  Sang-gil Lee ,  Edward Cho ,  Min-hee Choi ,  Seung-hun Lee

IPC: H01L29/08 ,  H01L21/8234 ,  H01L21/8238 ,  H01L29/78

CPC classification number: H01L29/0847 ,  H01L21/823418 ,  H01L21/823425 ,  H01L21/823814 ,  H01L29/785

Abstract: A semiconductor device includes: a fin-type active region extending on a substrate in a first direction that is parallel to an upper surface of the substrate; and a source/drain region in a recess region extending into the fin-type active region, wherein the source/drain region includes: a first source/drain material layer; a second source/drain material layer on the first source/drain material layer; and a first dopant diffusion barrier layer on an interface between the first source/drain material layer and the second source/drain material layer.

公开(公告)号：US11735631B2

公开(公告)日：2023-08-22

申请号：US17470288

申请日：2021-09-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Cho-eun Lee ,  Seok-hoon Kim ,  Sang-gil Lee ,  Edward Namkyu Cho ,  Min-hee Choi ,  Seung-hun Lee

IPC: H01L29/08 ,  H01L29/78 ,  H01L21/8238 ,  H01L21/8234

CPC classification number: H01L29/0847 ,  H01L21/823418 ,  H01L21/823425 ,  H01L21/823814 ,  H01L29/785

Abstract: A semiconductor device includes: a fin-type active region extending on a substrate in a first direction that is parallel to an upper surface of the substrate; and a source/drain region in a recess region extending into the fin-type active region, wherein the source/drain region includes: a first source/drain material layer; a second source/drain material layer on the first source/drain material layer; and a first dopant diffusion barrier layer on an interface between the first source/drain material layer and the second source/drain material layer.

公开(公告)号：US11145720B2

公开(公告)日：2021-10-12

申请号：US16453347

申请日：2019-06-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Cho-eun Lee ,  Seok-hoon Kim ,  Sang-gil Lee ,  Edward Namkyu Cho ,  Min-hee Choi ,  Seung-hun Lee

IPC: H01L29/08 ,  H01L29/78 ,  H01L21/8238 ,  H01L21/8234

Abstract: A semiconductor device includes: a fin-type active region extending on a substrate in a first direction that is parallel to an upper surface of the substrate; and a source/drain region in a recess region extending into the fin-type active region, wherein the source/drain region includes: a first source/drain material layer; a second source/drain material layer on the first source/drain material layer; and a first dopant diffusion barrier layer on an interface between the first source/drain material layer and the second source/drain material layer.

公开(公告)号：US20200020774A1

公开(公告)日：2020-01-16

申请号：US16453347

申请日：2019-06-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Cho-eun Lee ,  Seok-hoon Kim ,  Sang-gil Lee ,  Edward Namkyu Cho ,  Min-hee Choi ,  Seung-hun Lee

IPC: H01L29/08 ,  H01L29/78

Abstract: A semiconductor device includes: a fin-type active region extending on a substrate in a first direction that is parallel to an upper surface of the substrate; and a source/drain region in a recess region extending into the fin-type active region, wherein the source/drain region includes: a first source/drain material layer; a second source/drain material layer on the first source/drain material layer; and a first dopant diffusion barrier layer on an interface between the first source/drain material layer and the second source/drain material layer.