公开(公告)号：US20130161727A1

公开(公告)日：2013-06-27

申请号：US13748163

申请日：2013-01-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Won-joo KIM ,  Yoon-dong PARK ,  Jung-hun SUNG ,  Yong-Koo KYOUNG ,  Sang-moo CHOI ,  Tae-hee LEE

IPC: H01L29/792

CPC classification number: H01L27/11578 ,  G11C16/0483 ,  G11C16/08 ,  H01L27/11519 ,  H01L27/11524 ,  H01L27/11551 ,  H01L27/11556

Abstract: Provided are a non-volatile memory devices having a stacked structure, and a memory card and a system including the same. A non-volatile memory device may include a substrate. A stacked NAND cell array may have at least one NAND set and each NAND set may include a plurality of NAND strings vertically stacked on the substrate. At least one signal line may be arranged on the substrate so as to be commonly coupled with the at least one NAND set.

Abstract translation: 提供了具有堆叠结构的非易失性存储器件，以及存储卡和包括其的系统。 非易失性存储器件可以包括衬底。 堆叠的NAND单元阵列可以具有至少一个NAND组，并且每个NAND组可以包括垂直堆叠在衬底上的多个NAND串。 至少一个信号线可以布置在衬底上，以便与至少一个NAND组共同耦合。