公开(公告)号：US20250098154A1

公开(公告)日：2025-03-20

申请号：US18825176

申请日：2024-09-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sanghyun SUNG ,  Seokhan PARK ,  Gyuhwan OH ,  Bowon YOO ,  Jinwoo HAN

IPC: H10B12/00

Abstract: A semiconductor device includes bit lines, which are apart from each other in a first direction and extend in a second direction that crosses the first direction, above a top surface of a substrate, comb-type insulating patterns arranged among the bit lines in the first direction and apart from each other in the second direction, line insulating layers apart from each other in the first direction, extending in the second direction, and covering the bit lines and portions of the comb-type insulating patterns from below, and a conductive line shield layer covering the line insulating layers and the other portions of the comb-type insulating patterns from below.