公开(公告)号：US20220189806A1

公开(公告)日：2022-06-16

申请号：US17190885

申请日：2021-03-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Shashank Shrikant Agashe ,  Gaurav Kumar ,  Sathyanarayanan Kulasekaran ,  Chanwoo Park ,  Yunje Cho

IPC: H01L21/67 ,  G06T17/00 ,  G06T19/20 ,  G06T7/00 ,  G01N23/2251

Abstract: The present disclosure relates to a method for estimating heights of defects in a wafer. The method comprises creating an un-calibrated 3D model of a defect in a wafer, determining one or more attributes associated with the un-calibrated 3D model, transforming the un-calibrated 3D model to a calibrated 3D model, and estimating a height of the defect using the calibrated 3D model. Creating an un-calibrated 3D model corresponds to a defect present in a wafer based on a plurality of Scanning Electron Microscope (SEM) images of the defect. Transforming the un-calibrated 3D model to a calibrated 3D model uses a scaling factor corresponding to the determined one or more attributes associated with the un-calibrated 3D model. A height of the defect is estimated based on the calibrated 3D model of the defect.

公开(公告)号：US12057336B2

公开(公告)日：2024-08-06

申请号：US17190885

申请日：2021-03-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Shashank Shrikant Agashe ,  Gaurav Kumar ,  Sathyanarayanan Kulasekaran ,  Chanwoo Park ,  Yunje Cho

IPC: H01L21/67 ,  G01N23/2251 ,  G06T7/00 ,  G06T17/00 ,  G06T19/20

CPC classification number: H01L21/67288 ,  G01N23/2251 ,  G06T7/001 ,  G06T17/00 ,  G06T19/20 ,  G01N2223/07 ,  G01N2223/418 ,  G01N2223/507 ,  G01N2223/6116 ,  G01N2223/646 ,  G06T2207/10061 ,  G06T2207/30148 ,  G06T2219/2016

Abstract: The present disclosure relates to a method for estimating heights of defects in a wafer. The method comprises creating an un-calibrated 3D model of a defect in a wafer, determining one or more attributes associated with the un-calibrated 3D model, transforming the un-calibrated 3D model to a calibrated 3D model, and estimating a height of the defect using the calibrated 3D model. Creating an un-calibrated 3D model corresponds to a defect present in a wafer based on a plurality of Scanning Electron Microscope (SEM) images of the defect. Transforming the un-calibrated 3D model to a calibrated 3D model uses a scaling factor corresponding to the determined one or more attributes associated with the un-calibrated 3D model. A height of the defect is estimated based on the calibrated 3D model of the defect.

公开(公告)号：US12255110B2

公开(公告)日：2025-03-18

申请号：US17341619

申请日：2021-06-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Gaurav Kumar ,  Lakshmi Narayana Pedapudi ,  Sameera Bharadwaja Hayavadana ,  Sathyanarayanan Kulasekaran ,  Shashank Shrikant Agashe ,  Wan Sung Park ,  Sung Ha Kim

IPC: H01L21/66 ,  G01B11/06 ,  G01N21/84 ,  G03F7/16 ,  G03F7/30 ,  G06T7/00 ,  H01L21/67 ,  H01L21/02

Abstract: Example embodiments may provide methods for determining a quality of a film in spin coating process. The methods may include capturing images of portions of the film using an imaging device while coating the film on a substrate using a spinner. The imaging device may include SPCs and lens and/or SLMs. The methods may also include determining whether a characteristic of the film matches to a standard based on the images of the portions of the film. The method may further include performing detecting that the quality of the film is optimal in response to determining that the characteristic of the film matches to the standard or detecting that the quality of the film is not optimal in response to determining that the characteristic of the film does not match to the standard.