公开(公告)号：US10950544B2

公开(公告)日：2021-03-16

申请号：US16445021

申请日：2019-06-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dong Ik Lee ,  Dai Hong Kim ,  Ji Woon Im ,  Se Mee Jang ,  Bo Ra Nam

IPC: H01L23/528 ,  H01L27/11582 ,  H01L21/768 ,  H01L23/522 ,  H01L27/11565

Abstract: A semiconductor device includes a gate pattern disposed over a lower structure, and including a gate electrode region and a gate pad region extending from the gate electrode region; and a vertical channel semiconductor layer having a side surface facing the gate electrode region of the gate pattern. The gate pad region includes a first pad region having a thickness greater than a thickness of the gate electrode region. The first pad region includes an upper surface, a lower surface opposing the upper surface, and an outer side surface. The outer side surface has a lower outer side surface and an upper outer side surface, divided from each other by a boundary portion. The lower outer side surface extends from the lower surface, and a connection portion of the lower outer side surface and the lower surface has a rounded shape.

公开(公告)号：US10229929B2

公开(公告)日：2019-03-12

申请号：US15652648

申请日：2017-07-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kwang-Soo Kim ,  Se Mee Jang

IPC: H01L27/11582 ,  H01L27/11565 ,  H01L27/11575 ,  H01L27/1157 ,  H01L23/535

Abstract: Disclosed is a semiconductor memory device may include a substrate including a cell array region and a contact region and a stacking structure including a plurality of insulating layers and a plurality of gate electrodes alternately stacked on the substrate. The stacking structure may include a stepwise structure in the contact region. Ones of the plurality of gate electrodes may include a respective pad unit that comprises a step of the stepwise structure. At least one of the pad units may include a base pad and a protrusion pad on the base pad. The protrusion pad may be between and spaced apart from two edges of a surface of the base pad that are perpendicular to an extension direction of the respective gate electrode.