公开(公告)号：US20130241065A1

公开(公告)日：2013-09-19

申请号：US13777191

申请日：2013-02-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Min-sung KANG ,  Se-myeong JANG

IPC: H01L23/52

CPC classification number: H01L23/52 ,  H01L23/522 ,  H01L23/5226 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor device may include a semiconductor layer including at least one unit device, a first interconnection on the semiconductor layer and electrically connected to the at least one unit device, a diffusion barrier layer on the first interconnection, an intermetallic dielectric layer on the diffusion barrier layer, a plug in a first region of the intermetallic dielectric layer and passing through the diffusion barrier layer so that a bottom surface thereof contacts the first interconnection, and a first dummy plug in a second region of the intermetallic dielectric layer, passing through the diffusion barrier layer, and disposed apart from the first interconnection so that a bottom surface of the first dummy plug does not contact the first interconnection.

Abstract translation: 半导体器件可以包括半导体层，其包括至少一个单元器件，半导体层上的第一互连并且电连接到至少一个单元器件，第一互连上的扩散阻挡层，扩散阻挡层上的金属间介电层 在所述金属间介电层的第一区域中插入并穿过所述扩散阻挡层使得其底表面接触所述第一互连，以及穿过所述扩散层的所述金属间介电层的第二区域中的第一虚拟插塞 阻挡层，并且设置成与第一互连分开，使得第一虚拟插头的底表面不接触第一互连。

公开(公告)号：US20190355813A1

公开(公告)日：2019-11-21

申请号：US16217285

申请日：2018-12-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Se-myeong JANG ,  Jun-hyeok AHN ,  Bong-soo KIM ,  Hyo-bin PARK ,  Myoung-seob SHIM

IPC: H01L29/06 ,  H01L29/51 ,  H01L21/762

Abstract: Provided are semiconductor devices including device isolation layers. The semiconductor device includes a substrate having a cell region and a core/peripheral region, a first active region in the cell region of the substrate, a first device isolation layer that defines the first active region, a second active region in the core/peripheral region of the substrate; and a second device isolation layer that defines the second active region. A height from a lower surface of the substrate to an upper end of the first device isolation layer in a first direction that is perpendicular to the lower surface of the substrate is less than or equal to a height from the lower surface of the substrate to an upper end of the first active region in the first direction.