公开(公告)号：US20190097007A1

公开(公告)日：2019-03-28

申请号：US15914611

申请日：2018-03-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jun-hyeok AHN ,  Eun-jung Kim ,  Hui-jung Kim ,  Ki-seok Lee ,  Bong-soo Kim ,  Myeong-dong Lee ,  Sung-hee Han ,  Yoo-sang Hwang

IPC: H01L29/423 ,  H01L29/06 ,  H01L29/40 ,  H01L29/66 ,  H01L21/762 ,  H01L21/74

Abstract: An integrated circuit device may include a pair of line structures. Each line structure may include a pair of conductive lines extending over a substrate in a first horizontal direction and a pair of insulating capping patterns respectively covering the pair of conductive lines. The integrated circuit device may include a conductive plug between the pair of line structures and a metal silicide film contacting a top surface of the conductive plug between the pair of insulating capping patterns. The conductive plug may have a first width between the pair of conductive lines and a second width between the pair of insulating capping patterns, in a second horizontal direction perpendicular to the first horizontal direction, where the second width is greater than the first width.

公开(公告)号：US20190355813A1

公开(公告)日：2019-11-21

申请号：US16217285

申请日：2018-12-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Se-myeong JANG ,  Jun-hyeok AHN ,  Bong-soo KIM ,  Hyo-bin PARK ,  Myoung-seob SHIM

IPC: H01L29/06 ,  H01L29/51 ,  H01L21/762

Abstract: Provided are semiconductor devices including device isolation layers. The semiconductor device includes a substrate having a cell region and a core/peripheral region, a first active region in the cell region of the substrate, a first device isolation layer that defines the first active region, a second active region in the core/peripheral region of the substrate; and a second device isolation layer that defines the second active region. A height from a lower surface of the substrate to an upper end of the first device isolation layer in a first direction that is perpendicular to the lower surface of the substrate is less than or equal to a height from the lower surface of the substrate to an upper end of the first active region in the first direction.