公开(公告)号：US20230215769A1

公开(公告)日：2023-07-06

申请号：US17874450

申请日：2022-07-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Doory KIM ,  Jae Hwang JUNG ,  Wook Rae KIM ,  Nam Yoon KIM ,  Myung Jun LEE ,  SeokRan GO ,  Dokyung JEONG ,  Uidon JEONG

IPC: H01L21/66 ,  G01N21/95 ,  G01N21/956 ,  G01N21/64

CPC classification number: H01L22/12 ,  G01N21/9501 ,  G01N21/956 ,  G01N21/643 ,  G01N2021/6439

Abstract: A method for fabricating a semiconductor device is provided. The method for fabricating the semiconductor device includes forming a semiconductor pattern including a first layer and a second layer on a substrate, forming a coating layer on a surface of the first layer, forming a dyeing substance in which one of an antibody or a protein is combined with a fluorophore, attaching the dyeing substance to a surface of the coating layer to form a dyeing layer, and photographing the fluorophore with an ultra-high resolution microscope to detect the semiconductor pattern.