公开(公告)号：US10007185B2

公开(公告)日：2018-06-26

申请号：US15361679

申请日：2016-11-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sook Hyun Lee ,  Jin Choi ,  Sinjeung Park ,  Seombeom Kim ,  Inkyun Shin

IPC: G03F7/20

CPC classification number: G03F7/2059

Abstract: Disclosed is an electron beam lithography method. The method comprises obtaining a target pattern having a first width to be formed on a substrate, acquiring a dose pattern including a fixed dose cell which corresponds to a region of the dose pattern with a constant dose amount of electron beam to be provided onto the substrate and a variable dose cell which corresponds to a region of the dose pattern with a variable dose amount which is varied based on the first width of the target pattern, and providing the electron beam to expose the substrate according to the dose pattern.