公开(公告)号：US20240071545A1

公开(公告)日：2024-02-29

申请号：US18302034

申请日：2023-04-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seungjun Oh ,  Seong Geon Lee ,  Dae-Won Kim ,  Kyungduk Lee ,  Youn-Soo Cheon

IPC: G11C29/12 ,  G11C29/42

CPC classification number: G11C29/12005 ,  G11C29/42 ,  G11C2029/1202

Abstract: A method of operating a memory device includes reading a first page of memory cells containing at least one worn-out memory cell therein using a read voltage, from a first memory block, and reading a second page of memory cells, which extends adjacent to the first page in the first memory block, using the read voltage. An operation is performed to determine a match rate between a position of a column including a “0” bit in the first page with a position of a column including a “0” bit in the second page. Thereafter, the second page is read by adjusting a read pass voltage applied to a word line of another page in the first memory block, when the match rate exceeds a threshold match rate.