公开(公告)号：US09590121B2

公开(公告)日：2017-03-07

申请号：US14744938

申请日：2015-06-19

申请人： Samsung Electronics Co., Ltd.

发明人： Seong Heon Kim ,  Dongjin Yun ,  Sung Heo ,  Kyu Sik Kim ,  Satoh Ryuichi ,  Gyeongsu Park ,  Hyung-Ik Lee

IPC分类号： H01L27/146 ,  H01L31/0224 ,  H01L31/18 ,  H01L51/42 ,  H01L51/00

CPC分类号： H01L31/022408 ,  H01L31/18 ,  H01L51/0046 ,  H01L51/0077 ,  H01L51/4253 ,  Y02E10/549 ,  Y02P70/521

摘要： An optoelectronic device includes a first electrode and a second electrode facing each other, a photoelectric conversion layer between the first electrode and the second electrode, and a buffer layer between at least one of the photoelectric conversion layer and the first electrode, and the photoelectric conversion layer and the second electrode, the buffer layer including one of MoOx1 (2.58≦x1

摘要翻译： 光电子器件包括彼此面对的第一电极和第二电极，第一电极和第二电极之间的光电转换层，以及光电转换层和第一电极中的至少一个之间的缓冲层，以及光电转换 所述缓冲层包括MoOx1（2.58≤x1<3.0），ZnOx2（1.0≤x2<2.0），TiOx3（1.5≤x3<2.0），VOx4（1.5≤x4<2.0），TaOx5（ 1.0≤x5<2.5），WOx6（2.0

公开(公告)号：US10181497B2

公开(公告)日：2019-01-15

申请号：US15409656

申请日：2017-01-19

申请人： Samsung Electronics Co., Ltd.

发明人： Sung Heo ,  Kyu Sik Kim ,  Nam Jeong Kim ,  Seong Heon Kim ,  Yongsung Kim ,  Eunae Cho ,  Takkyun Ro ,  Dongjin Yun ,  Yongsu Kim ,  Wenxu Xianyu ,  Yong-Young Park ,  Kyung Bae Park

IPC分类号： H01L27/30 ,  H01L51/44 ,  H01L51/50 ,  H01L51/52 ,  H01L27/146 ,  H01L51/56 ,  H01L51/42

摘要： An optoelectronic device includes a first electrode and a second electrode facing each other a photoelectric conversion layer between the first electrode and the second electrode and a buffer layer between the photoelectric conversion layer and the second electrode. The buffer layer includes a nitride. The nitride includes one of silicon nitride (SiNx, 0

公开(公告)号：US11508929B2

公开(公告)日：2022-11-22

申请号：US16505710

申请日：2019-07-09

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Dongjin Yun ,  Sunghoon Park ,  Seong Heon Kim ,  Hyangsook Lee ,  Woon Jung Paek ,  Youngnam Kwon ,  Yongsu Kim ,  Jaegwan Chung

IPC分类号： H01L23/52 ,  H01L51/52 ,  H01L21/3213 ,  H01L51/00 ,  H01B1/22 ,  H01L51/56 ,  B05D3/00

摘要： A conductor includes a plurality of metal nanostructures and an organic material, where a portion of the organic material surrounding each of the metal nanostructures is selectively removed, and the conductor has a haze of less than or equal to about 1.1, a light transmittance of greater than or equal to about 85% at about 550 nm, and a sheet resistance of less than or equal to about 100 Ω/sq. An electronic device includes the conductor, and a method of manufacturing a conductor includes preparing a conductive film including a metal nanostructure and an organic material, and selectively removing the organic material from the conductive film using a cluster ion beam sputtering.