公开(公告)号：US20240006595A1

公开(公告)日：2024-01-04

申请号：US18342893

申请日：2023-06-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jusik Kim ,  Sewon Kim ,  Yongsu Kim ,  Ryounghee Kim ,  Myungjin Lee

IPC: H01M4/36 ,  H01M4/04 ,  H01M4/583 ,  H01M4/485 ,  H01M4/40 ,  H01M10/0562

CPC classification number: H01M4/366 ,  H01M4/0404 ,  H01M4/583 ,  H01M4/485 ,  H01M4/405 ,  H01M10/0562 ,  H01M2004/027

Abstract: An all-solid-state battery including a cathode including a cathode active material; an anode including an anode current collector, a first anode active material layer, and a second anode active material layer; and a solid electrolyte arranged between the cathode and the anode, wherein the first anode active material layer is arranged adjacent to the solid electrolyte and comprises M1-M2Ox, Li-M1-M2Ox, or a combination thereof, wherein the first metal and the second metal are each independently at least one element that reacts with lithium to form a lithium alloy or compound, x>0, the second anode active material layer is arranged between the anode current collector and the first anode active material layer and includes a second anode active material, and the second anode active material includes a carbon-containing anode active material, or a carbon-containing anode active material, and at least one of a metallic or metalloid anode active material.

公开(公告)号：US11508929B2

公开(公告)日：2022-11-22

申请号：US16505710

申请日：2019-07-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dongjin Yun ,  Sunghoon Park ,  Seong Heon Kim ,  Hyangsook Lee ,  Woon Jung Paek ,  Youngnam Kwon ,  Yongsu Kim ,  Jaegwan Chung

IPC: H01L23/52 ,  H01L51/52 ,  H01L21/3213 ,  H01L51/00 ,  H01B1/22 ,  H01L51/56 ,  B05D3/00

Abstract: A conductor includes a plurality of metal nanostructures and an organic material, where a portion of the organic material surrounding each of the metal nanostructures is selectively removed, and the conductor has a haze of less than or equal to about 1.1, a light transmittance of greater than or equal to about 85% at about 550 nm, and a sheet resistance of less than or equal to about 100 Ω/sq. An electronic device includes the conductor, and a method of manufacturing a conductor includes preparing a conductive film including a metal nanostructure and an organic material, and selectively removing the organic material from the conductive film using a cluster ion beam sputtering.

公开(公告)号：US20210376099A1

公开(公告)日：2021-12-02

申请号：US17400901

申请日：2021-08-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Eunae Cho ,  Dongjin Lee ,  Ji Eun Lee ,  Kyoung-Ho Jung ,  Dong Su Ko ,  Yongsu Kim ,  Jiho Yoo ,  Sung Heo ,  Hyun Park ,  Satoru Yamada ,  Moonyoung Jeong ,  Sungjin Kim ,  Gyeongsu Park ,  Han Jin Lim

IPC: H01L29/423 ,  H01L29/49 ,  H01L21/28 ,  H01L29/51

Abstract: A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a substrate including a trench. The semiconductor device further includes a gate electrode disposed in the trench, and a gate insulating film disposed between the substrate and the gate electrode. The gate electrode includes a gate conductor and a metal element, and an effective work function of the gate electrode is less than an effective work function of the gate conductor.

公开(公告)号：US20190312119A1

公开(公告)日：2019-10-10

申请号：US16432298

申请日：2019-06-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Eunae CHO ,  Dongjin Lee ,  Ji Eun Lee ,  Kyoung-Ho Jung ,  Dong Su Ko ,  Yongsu Kim ,  Jiho Yoo ,  Sung Heo ,  Hyun Park ,  Satoru Yamada ,  Moonyoung Jeong ,  Sungjin Kim ,  Gyeongsu Park ,  Han Jin Lim

IPC: H01L29/423 ,  H01L29/51 ,  H01L29/49 ,  H01L21/28

Abstract: A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a substrate including a trench. The semiconductor device further includes a gate electrode disposed in the trench, and a gate insulating film disposed between the substrate and the gate electrode. The gate electrode includes a gate conductor and a metal element, and an effective work function of the gate electrode is less than an effective work function of the gate conductor.

公开(公告)号：US09614893B2

公开(公告)日：2017-04-04

申请号：US13965927

申请日：2013-08-13

Applicant: Samsung Electronics Co. Ltd.

Inventor： Yongsu Kim

IPC: G06F15/16 ,  H04L29/08 ,  G06F17/30

CPC classification number: H04L67/06 ,  G06F17/30165

Abstract: An auto-synchronization method, apparatus, and system for synchronizing compressed content file automatically in such a way of tracing the modification history of source files of the compressed content file and synchronizing the modified source files selectively are provided. The portable device includes a radio communication unit configured to connect to the synchronization server to transmit and receive data related to the compressed content file, a storage unit configured to store at least one of the compressed content file, compressed content file information, and source file information related to source files constituting the compressed content file, and a control unit configured to detect a synchronization request signal generated by an event modifying the compressed content file, extract at least one modified first source file from the compressed content file based on the source file information, and synchronize the extracted first source file with a second source file matching among source files stored in a synchronization server.

公开(公告)号：US10325992B2

公开(公告)日：2019-06-18

申请号：US14854272

申请日：2015-09-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Eunae Cho ,  Dongjin Lee ,  Ji Eun Lee ,  Kyoung-Ho Jung ,  Dong Su Ko ,  Yongsu Kim ,  Jiho Yoo ,  Sung Heo ,  Hyun Park ,  Satoru Yamada ,  Moonyoung Jeong ,  Sungjin Kim ,  Gyeongsu Park ,  Han Jin Lim

IPC: H01L29/423 ,  H01L29/49 ,  H01L21/28 ,  H01L29/51

Abstract: A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a substrate including a trench. The semiconductor device further includes a gate electrode disposed in the trench, and a gate insulating film disposed between the substrate and the gate electrode. The gate electrode includes a gate conductor and a metal element, and an effective work function of the gate electrode is less than an effective work function of the gate conductor.

公开(公告)号：US20170207275A1

公开(公告)日：2017-07-20

申请号：US15409656

申请日：2017-01-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung Heo ,  Kyu Sik Kim ,  Nam Jeong Kim ,  Seong Heon KIM ,  Yongsung Kim ,  Eunae Cho ,  Takkyun Ro ,  Dongjin Yun ,  Yongsu Kim ,  Wenxu Xianyu ,  Yong-Young Park ,  Kyung Bae Park

IPC: H01L27/30 ,  H01L51/56 ,  H01L51/52 ,  H01L27/146 ,  H01L51/44 ,  H01L51/50

CPC classification number: H01L27/307 ,  H01L27/14621 ,  H01L27/14643 ,  H01L27/14665 ,  H01L27/301 ,  H01L51/42 ,  H01L51/441 ,  H01L51/448 ,  H01L51/5088 ,  H01L51/5092 ,  H01L51/5096 ,  H01L51/5203 ,  H01L51/56 ,  H01L2251/301 ,  H01L2251/552 ,  Y02E10/549

Abstract: An optoelectronic device includes a first electrode and a second electrode facing each other a photoelectric conversion layer between the first electrode and the second electrode and a buffer layer between the photoelectric conversion layer and the second electrode. The buffer layer includes a nitride. The nitride includes one of silicon nitride (SiNx, 0

公开(公告)号：US10181497B2

公开(公告)日：2019-01-15

申请号：US15409656

申请日：2017-01-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung Heo ,  Kyu Sik Kim ,  Nam Jeong Kim ,  Seong Heon Kim ,  Yongsung Kim ,  Eunae Cho ,  Takkyun Ro ,  Dongjin Yun ,  Yongsu Kim ,  Wenxu Xianyu ,  Yong-Young Park ,  Kyung Bae Park

IPC: H01L27/30 ,  H01L51/44 ,  H01L51/50 ,  H01L51/52 ,  H01L27/146 ,  H01L51/56 ,  H01L51/42

Abstract: An optoelectronic device includes a first electrode and a second electrode facing each other a photoelectric conversion layer between the first electrode and the second electrode and a buffer layer between the photoelectric conversion layer and the second electrode. The buffer layer includes a nitride. The nitride includes one of silicon nitride (SiNx, 0

公开(公告)号：US20170346099A1

公开(公告)日：2017-11-30

申请号：US15389620

申请日：2016-12-23

Applicant: Samsung Electronics Co., Ltd. ,  Samsung SDI Co., Ltd.

Inventor： Hongsoo Choi ,  Yongsu Kim ,  Yonggun Lee ,  Wonseok Chang

IPC: H01M4/62 ,  H01M4/38 ,  H01M10/0525 ,  H01M4/36 ,  H01M4/02

CPC classification number: H01M4/628 ,  H01M4/134 ,  H01M4/366 ,  H01M4/382 ,  H01M10/0525 ,  H01M2004/027 ,  Y02T10/7011

Abstract: A lithium battery includes: an anode including a lithium metal or a lithium alloy; an ion-conductive amorphous metal nitride layer disposed on a surface of the anode; a liquid electrolyte; and a cathode.

公开(公告)号：US20240258533A1

公开(公告)日：2024-08-01

申请号：US18493459

申请日：2023-10-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Myungjin Lee ,  Jirae Kim ,  Jeongkuk Shon ,  Yongsu Kim ,  Jusik Kim ,  Changhoon Jung

IPC: H01M4/80 ,  H01M4/02 ,  H01M4/587 ,  H01M4/66

CPC classification number: H01M4/808 ,  H01M4/587 ,  H01M4/661 ,  H01M2004/021 ,  H01M2004/027

Abstract: An anode for a solid-state secondary battery, the anode including: a three-dimensional porous current collector including a plurality of pores having a lithiophilic property, and having a porosity of about 10 percent to about 99 percent, based on a total volume of the three-dimensional current collector, wherein pores of the plurality of the pores have a size and a pitch, and a ratio of the size to the pitch is about 0.1 to about 0.9; and a first anode active material layer disposed on a first side of the three-dimensional porous current collector, wherein the first anode active material layer is disposed in at least a portion of the pores of the three-dimensional porous current collector.