公开(公告)号：US09674614B2

公开(公告)日：2017-06-06

申请号：US14738161

申请日：2015-06-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ho Jin Yoon ,  Min Kim ,  Tae Myun Kim ,  Seong Min Park ,  Won Youl Bae

IPC: H04R9/02 ,  H04R9/06

CPC classification number: H04R9/025 ,  H04R9/06

Abstract: A speaker unit includes a magnet having poles and generating magnetic flux, and a yoke part forming a path of the magnetic flux and including a first yoke extending from one of the poles, a second yoke extending from another one of the poles, and magnetic gaps disposed between the first yoke and the second yoke. The speaker unit further includes a voice coil disposed between the magnetic gaps and moving when applied with an electric current, and a diaphragm generating sound pressure while vibrating according to the movement of the voice coil. The first yoke includes magnetic plates protruding toward the second yoke, and the magnetic plates have thicknesses different from each other.

公开(公告)号：US11770925B2

公开(公告)日：2023-09-26

申请号：US17339130

申请日：2021-06-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jin A. Kim ,  Ho-In Ryu ,  Seong Min Park

IPC: H10B12/00 ,  H01L21/768 ,  H01L23/532

CPC classification number: H10B12/315 ,  H01L21/7682 ,  H01L23/5329 ,  H10B12/34 ,  H10B12/482 ,  H01L23/53295 ,  H10B12/485

Abstract: A semiconductor device includes a semiconductor substrate including a trench, a direct contact in the trench, the direct contact having a width smaller than a width of the trench, a bit line structure on the direct contact, the bit line structure having a width smaller than the width of the trench, a first spacer including a first portion and a second portion, the first portion extending along an entire side surface of the direct contact, and the second portion extending along the trench, a second spacer on the first spacer, the second spacer filling the trench, a third spacer on the second spacer, and an air spacer on the third spacer, the air spacer being spaced apart from the second spacer by the third spacer, wherein the first spacer includes silicon oxide.