公开(公告)号：US20190067228A1

公开(公告)日：2019-02-28

申请号：US16052383

申请日：2018-08-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seong-Min SON ,  Jeong-Gi JIN ,  Jin-Ho AN ,  Jin-Ho CHUN ,  Kwang-Jin MOON ,  Ho-Jin LEE

IPC: H01L23/00 ,  H01L23/522 ,  H01L23/485

Abstract: A semiconductor device includes a protective layer, a redistribution pattern, a pad pattern and an insulating polymer layer. The protective layer may be formed on a substrate. The redistribution pattern may be formed on the protective layer. An upper surface of the redistribution may be substantially flat. The pad pattern may be formed directly on the redistribution pattern. An upper surface of the pad pattern may be substantially flat. The insulating polymer layer may be formed on the redistribution pattern and the pad pattern. An upper surface of the insulating polymer layer may be lower than the upper surface of the pad pattern. The semiconductor device may have a high reliability.

公开(公告)号：US20210005565A1

公开(公告)日：2021-01-07

申请号：US17029639

申请日：2020-09-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seong-Min SON ,  Jeong-Gi JIN ,  Jin-Ho AN ,  Jin-Ho CHUN ,  Kwang-Jin MOON ,  Ho-Jin LEE

IPC: H01L23/00 ,  H01L23/485 ,  H01L23/522

Abstract: A semiconductor device includes a protective layer, a redistribution pattern, a pad pattern and an insulating polymer layer. The protective layer may be formed on a substrate. The redistribution pattern may be formed on the protective layer. An upper surface of the redistribution may be substantially flat. The pad pattern may be formed directly on the redistribution pattern. An upper surface of the pad pattern may be substantially flat. The insulating polymer layer may be formed on the redistribution pattern and the pad pattern. An upper surface of the insulating polymer layer may be lower than the upper surface of the pad pattern. The semiconductor device may have a high reliability.

公开(公告)号：US20190131228A1

公开(公告)日：2019-05-02

申请号：US16106645

申请日：2018-08-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jin-Ho CHUN ,  Seong-Min SON ,  Hyung-Jun JEON ,  Kwang-Jin MOON ,  Jin-Ho AN ,  Ho-Jin LEE ,  Atsushi FUJISAKI

IPC: H01L23/498 ,  H01L23/525 ,  H01L23/532 ,  H01L23/31 ,  H01L21/768 ,  H01L23/00

Abstract: A semiconductor device and a method of manufacturing the same, the device including a through-hole electrode structure extending through a substrate; a redistribution layer on the through-hole electrode structure; and a conductive pad, the conductive pad including a penetrating portion extending through the redistribution layer; and a protrusion portion on the penetrating portion, the protrusion portion protruding from an upper surface of the redistribution layer, wherein a central region of an upper surface of the protrusion portion is flat and not closer to the substrate than an edge region of the upper surface of the protrusion portion.