公开(公告)号：US20190067228A1

公开(公告)日：2019-02-28

申请号：US16052383

申请日：2018-08-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seong-Min SON ,  Jeong-Gi JIN ,  Jin-Ho AN ,  Jin-Ho CHUN ,  Kwang-Jin MOON ,  Ho-Jin LEE

IPC: H01L23/00 ,  H01L23/522 ,  H01L23/485

Abstract: A semiconductor device includes a protective layer, a redistribution pattern, a pad pattern and an insulating polymer layer. The protective layer may be formed on a substrate. The redistribution pattern may be formed on the protective layer. An upper surface of the redistribution may be substantially flat. The pad pattern may be formed directly on the redistribution pattern. An upper surface of the pad pattern may be substantially flat. The insulating polymer layer may be formed on the redistribution pattern and the pad pattern. An upper surface of the insulating polymer layer may be lower than the upper surface of the pad pattern. The semiconductor device may have a high reliability.

公开(公告)号：US20210005565A1

公开(公告)日：2021-01-07

申请号：US17029639

申请日：2020-09-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seong-Min SON ,  Jeong-Gi JIN ,  Jin-Ho AN ,  Jin-Ho CHUN ,  Kwang-Jin MOON ,  Ho-Jin LEE

IPC: H01L23/00 ,  H01L23/485 ,  H01L23/522

Abstract: A semiconductor device includes a protective layer, a redistribution pattern, a pad pattern and an insulating polymer layer. The protective layer may be formed on a substrate. The redistribution pattern may be formed on the protective layer. An upper surface of the redistribution may be substantially flat. The pad pattern may be formed directly on the redistribution pattern. An upper surface of the pad pattern may be substantially flat. The insulating polymer layer may be formed on the redistribution pattern and the pad pattern. An upper surface of the insulating polymer layer may be lower than the upper surface of the pad pattern. The semiconductor device may have a high reliability.

公开(公告)号：US20140145327A1

公开(公告)日：2014-05-29

申请号：US14060913

申请日：2013-10-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyung-Jun JEON ,  Jae-Hyun PHEE ,  Byung-Lyul PARK ,  Ji-Soon PARK ,  Jeong-Gi JIN

IPC: H01L23/00

CPC classification number: H01L24/03 ,  H01L23/3192 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L2224/03019 ,  H01L2224/0345 ,  H01L2224/03612 ,  H01L2224/03614 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05073 ,  H01L2224/05082 ,  H01L2224/05124 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05171 ,  H01L2224/05558 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/10125 ,  H01L2224/10126 ,  H01L2224/11462 ,  H01L2224/11472 ,  H01L2224/11618 ,  H01L2224/11849 ,  H01L2224/11901 ,  H01L2224/11902 ,  H01L2224/13006 ,  H01L2224/13007 ,  H01L2224/13082 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13164 ,  H01L2224/13169 ,  H01L2224/13294 ,  H01L2224/133 ,  H01L2224/13311 ,  H01L2224/1401 ,  H01L2224/81191 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/01029 ,  H01L2924/01074 ,  H01L2924/01023 ,  H01L2224/05147 ,  H01L2924/014 ,  H01L2924/01047 ,  H01L2224/13111

Abstract: Semiconductor devices and methods for fabricating the same are provided. For example, the semiconductor device includes a substrate, a first contact pad formed on the substrate, an insulation layer formed on the substrate and including a first opening which exposes the first contact pad, a first bump formed on the first contact pad and electrically connected to the first contact pad, and a reinforcement member formed on the insulation layer and adjacent to a side surface of the first lower bump. The first bump includes a first lower bump and a first upper bump, which are sequentially stacked on the first contact pad.

Abstract translation: 提供半导体器件及其制造方法。 例如，半导体器件包括衬底，形成在衬底上的第一接触焊盘，形成在衬底上并包括暴露第一接触焊盘的第一开口的绝缘层，形成在第一接触焊盘上的电连接 到所述第一接触垫，以及形成在所述绝缘层上并且与所述第一下凸块的侧表面相邻的加强构件。 第一凸块包括顺序堆叠在第一接触垫上的第一下凸块和第一上凸块。