公开(公告)号：US20220128897A1

公开(公告)日：2022-04-28

申请号：US17358785

申请日：2021-06-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Moosong LEE ,  Seongbo SHIM

IPC: G03F1/22

Abstract: An EUV photomask may include a multi-layered structure on a substrate, a capping layer on the multi-layered structure, and an absorber on the capping layer. The absorber may include a first sidewall and a second sidewall. The first sidewall may extend from an upper surface of the capping layer in a vertical direction substantially perpendicular to an upper surface of the substrate, and may be a flat plane. The second sidewall may extend from the first sidewall in the vertical direction, and may be a curved surface.

公开(公告)号：US20250140558A1

公开(公告)日：2025-05-01

申请号：US18761797

申请日：2024-07-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yeongsup SOHN ,  Seongbo SHIM ,  Moosong LEE ,  Jiyeon YI

IPC: H01L21/033 ,  G03F7/00 ,  G03F7/004 ,  G03F7/16 ,  H01L21/308 ,  H01L21/311 ,  H01L21/3213

Abstract: A method of forming patterns includes forming an etch target film on a substrate having a first region and a second region, forming a hardmask structure on the etch target film in the first region and the second region, the hardmask structure including a plurality of hardmask layers, forming a first photoresist film on the hardmask structure in at least one of the first region and the second region, forming a first photoresist pattern in the second region by exposing and developing the first photoresist film, and forming a pattern from the etch target film by etching the hardmask structure and the etch target film by using the first photoresist pattern, wherein a top surface of the hardmask structure in the first region is exposed to the outside after the first photoresist film is developed.