公开(公告)号：US11960212B2

公开(公告)日：2024-04-16

申请号：US18088364

申请日：2022-12-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hoduk Cho ,  Seongbo Shim ,  Hyungjong Bae ,  Chan Hwang

IPC: G03F7/00

CPC classification number: G03F7/702 ,  G03F7/70116 ,  G03F7/70504

Abstract: An operating method of an extreme ultraviolet (EUV) lithography device includes defining a target image to render an illumination system, assigning priorities to respective positions of facets of a pupil facet mirror corresponding to the target image, assigning a mirror according to the assigned priorities using linear programming, generating the illumination system by selecting one of the facets of the pupil facet mirror based on a symmetry criterion, and converting mirror assignment information and source map information corresponding to the selected facet into a form recognizable by an EUV scanner.

公开(公告)号：US20230393484A1

公开(公告)日：2023-12-07

申请号：US18088364

申请日：2022-12-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hoduk CHO ,  Seongbo Shim ,  Hyungjong Bae ,  Chan Hwang

IPC: G03F7/20

CPC classification number: G03F7/702

Abstract: An operating method of an extreme ultraviolet (EUV) lithography device includes defining a target image to render an illumination system, assigning priorities to respective positions of facets of a pupil facet mirror corresponding to the target image, assigning a mirror according to the assigned priorities using linear programming, generating the illumination system by selecting one of the facets of the pupil facet mirror based on a symmetry criterion, and converting mirror assignment information and source map information corresponding to the selected facet into a form recognizable by an EUV scanner.

公开(公告)号：US11762277B2

公开(公告)日：2023-09-19

申请号：US17358785

申请日：2021-06-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Moosong Lee ,  Seongbo Shim

IPC: G03F1/22 ,  G03F1/24

CPC classification number: G03F1/22 ,  G03F1/24

Abstract: An EUV photomask may include a multi-layered structure on a substrate, a capping layer on the multi-layered structure, and an absorber on the capping layer. The absorber may include a first sidewall and a second sidewall. The first sidewall may extend from an upper surface of the capping layer in a vertical direction substantially perpendicular to an upper surface of the substrate, and may be a flat plane. The second sidewall may extend from the first sidewall in the vertical direction, and may be a curved surface.